Patents by Inventor Sean Yao

Sean Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7211518
    Abstract: A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into the etch chamber wherein the wafer has a barrier layer over the wafer and a dielectric layer over the barrier layer. The dielectric layer is etched. The barrier layer is opened. The wafer is removed from the etch chamber. A waferless automatic cleaning of the etch chamber without the wafer is provided. The waferless automatic cleaning comprises providing a waferless automatic cleaning gas comprising oxygen and nitrogen to the etch chamber and forming a waferless automatic cleaning plasma from the waferless automatic cleaning gas to clean the etch chamber.
    Type: Grant
    Filed: April 19, 2004
    Date of Patent: May 1, 2007
    Assignee: Lam Research Corporation
    Inventors: Xiaoqiang Sean Yao, Bi-Ming Yen, Taejoon Han, Peter Loewenhardt
  • Patent number: 6417998
    Abstract: A magnetoresistive write element having a planar coil layer between a first pole and a second pole. The magnetoresistive write element further includes a buildup insulation layer having an upper surface that is substantially coplanar with an upper surface of the first pole. Further, the planar coil layer is disposed above both the first pole and the buildup insulation layer. A method for forming a magnetoresistive write element includes providing a first pole and covering the first pole with an insulating layer. The insulating layer is then planarized, thereby exposing the first pole and defining a buildup insulation layer. This planarization also results in the formation of a substantially planar upper surface of the buildup insulation layer and a substantially planar upper surface of the first pole. More specifically, the first pole upper surface is substantially coplanar with the buildup insulation layer upper surface.
    Type: Grant
    Filed: March 23, 1999
    Date of Patent: July 9, 2002
    Assignee: Read-Rite Corporation
    Inventors: Billy W. Crue, Jr., Zhupei Shi, Vijay K. Dhingra, Sean Yao
  • Patent number: 6304414
    Abstract: A magnetoresistive write element having a greatly reduced stack height allowing construction of a smaller track width and tighter track width tolerances. The reduced stack height also produces improved magnetic flux flow properties in the write element leading to an improved magnetic fringing field in the write gap region The magnetoresistive write head includes an electrically conductive planar coil having a portion thereof extending between first and second poles. The first and second poles join one another to form a magnetic yoke which is closed at one end and open at the other. An insulation layer separates the coil from the first pole. Another layer of insulating material is formed into the coil, interspersed between the winds and having an upper surface which is flush with the upper surface of the coil. A thin layer of write gap material insulates the coil from the second pole.
    Type: Grant
    Filed: July 20, 1999
    Date of Patent: October 16, 2001
    Assignee: Read-Rite Corporation
    Inventors: Billy W. Crue, Jr., Renuka Apparao, Zhupei Shi, Sean Yao