Abstract: A method of forming a graphene layer structure, the method comprising: providing a growth substrate having a growth surface; and forming a graphene layer structure on the growth surface by CVD; wherein the growth surface is formed of a material selected from the group consisting of: YSZ, MgAl2O4, YAIO3, CaF2 and LaF3.

Abstract: A wafer for the CVD growth of uniform graphene and method of manufacture thereof There is provided a wafer for the CVD growth of uniform graphene at a temperature in excess of 700° C., the wafer comprising in order: a planar silicon substrate, an insulating layer provided across the silicon substrate, and a barrier layer provided across the insulating layer, wherein the insulating layer is a silicon nitride and/or aluminium nitride layer, and wherein the barrier layer has a constant thickness of 50 nm or less and provides a growth surface for the CVD growth of uniform graphene.

Abstract: A method for the manufacture of an improved graphene substrate and applications therefor There is provided a method (100) for the manufacture of an electronic device precursor, the method comprising: (i) providing a silicon wafer (200) having a growth surface (205); (ii) forming (105) an insulative layer (210) on the growth surface (205) having a thickness of from 1 nm to 10 nm, preferably 2 nm to 1 nm; (iii) forming (110) a graphene monolayer or multi-layer structure (215) on the insulative layer (210); (iv) optionally forming (115, 120) one or more further layers (220) and/or electrical contacts (225, 230) on the graphene monolayer or multi-layer structure (215); (v) forming (125) a polymer coating (235) over the graphene monolayer or multi-layer structure (215) and any further layers (115) and/or electrical contacts (225, 230); (vi) thinning (130) the silicon wafer (200), or removing the silicon wafer (200) to provide an exposed surface of the insulative layer (210), by etching with an etchant, wherein the

Abstract: The present invention relates to fluorescent dyes of formula (I), including salts thereof, and extracellular vesicles and cells labelled with the fluorescent dyes. The present invention also relates to methods, uses and kits thereof.

Abstract: The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.

Abstract: The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.

Abstract: There is provided a method for manufacturing graphene, the method comprising: forming graphene on a non-metallic surface of a substrate by CVD in a CVD reaction chamber, wherein the step of forming graphene comprises introducing a precursor in a gas phase and/or suspended in a gas into the CVD reaction chamber; wherein the precursor consists of one or more compounds selected from a C4—C10 organic compound; wherein the organic compound is branched such that the organic compound has at least three methyl groups; and wherein the organic compound consists of carbon and hydrogen and, optionally, oxygen, fluorine, chlorine and/or bromine.

Abstract: The present invention provides a method for the formation of graphene on a silicon substrate, the method comprising: (i) providing a silicon wafer having a growth surface which is free of native oxides, in a reaction chamber; (ii) nitriding the growth surface with a nitrogen-containing gas with the wafer at a temperature in excess of 800° C., to thereby form a silicon nitride layer; and (iii) forming a graphene mono-layer or multiple layer structure on the silicon nitride layer; wherein the method is performed in-situ and sequentially in the reaction chamber. The present invention also provides a graphene-on-silicon layer structure having an intervening silicon nitride layer and free of any intervening native oxide layer.