Abstract: The device for use in an explosive atmosphere zone has a device housing and at least one energy supply part that is provided with at least one battery or at least one rechargeable battery as well as energy-associated supply contacts. The energy-associated supply contacts interact with device-associated supply contacts when the energy supply part is connected to the device. The energy-associated and device-associated supply contacts have connected upstream thereof switches that, prior to separation of the energy supply part from the device, can be controlled by a circuit such that the switches deenergize the energy-associated and the device-associated supply contacts.

Abstract: The device for use in an explosive atmosphere zone has a device housing and at least one energy supply part that is provided with at least one battery or at least one rechargeable battery as well as energy-associated supply contacts. The energy-associated supply contacts interact with device-associated supply contacts when the energy supply part is connected to the device. The energy-associated and device-associated supply contacts have connected upstream thereof switches that, prior to separation of the energy supply part from the device, can be controlled by a circuit such that the switches deenergize the energy-associated and the device-associated supply contacts.

Abstract: To achieve high efficiency in regeneration of waste fluid from metal plating electrolytes for example, a device and a method for recovering a recovering material from a recovering fluid containing the recovering material are provided.

Abstract: A memory module is described which, externally, has the functionality of DDR SDRAMs and contains two groups of conventional SDRAMs. A conversion device provides for the conversion of clock signals, commands, and data. The conversion device contains a changeover switch, a delay locked loop and buffer memory for addresses and commands and also for the data, which are driven in a suitable manner by the delay locked loop.

Abstract: A method and a configuration for the output of bit error tables from semiconductor devices are described. A test control unit reads the bit error table from the memory device following a request from the test apparatus. Then, the bit error tables are transmitted sequentially to the test apparatus for further processing.

Abstract: A method and semiconductor circuit with which a self-test can be generated and tested with commands by which memory banks are interrogated simultaneously includes a processor for carrying out a built-in self-test and generating commands, each for testing only a respective single memory bank, and an additional processor connected downstream forms more complex multibank commands. Such multibank command formation enables a more diverse test of memories and is carried out faster. Principally, such multibank command generation using a combination of conventional single-bank commands has the advantage of not redeveloping a conventional BIST processor from scratch. It is necessary merely to connect a logic circuit downstream, with which conventional commands are combined, to form the multibank commands. As a result, complex self-test commands that simultaneously access a plurality of memory banks can be generated by a very low development outlay.

Abstract: An integrated memory has a memory cell array, which is subdivided into a plurality of separate segments. A first and a second local word line in different segments together form a common global word line. The global word line is decoded via a row decoder. The first and second local word lines are connected to a column decoder in such a way that they can be decoded individually and segment by segment in a manner dependent on a column address. The memory thus allows fast and current-saving activation of a word line.

Abstract: A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.

Abstract: A method and a configuration for the output of bit error tables from semiconductor devices are described. A test control unit reads the bit error table from the memory device following a request from the test apparatus. Then, the bit error tables are transmitted sequentially to the test apparatus for further processing.

Abstract: A method and semiconductor circuit with which a self-test can be generated and tested with commands by which memory banks are interrogated simultaneously includes a processor for carrying out a built-in self-test and generating commands for testing only a respective single memory bank, and an additional processor connected downstream forms more complex multibank commands. Such multibank command formation enables a more diverse test of memories and is carried out faster. Principally, such multibank command generation using a combination of conventional single-bank commands has the advantage of not redeveloping a conventional BIST processor from scratch. It is necessary merely to connect a logic circuit downstream, with which conventional commands are combined, to form the multibank commands. As a result, complex self-test commands that simultaneously access a plurality of memory banks can be generated by a very low development outlay.

Abstract: The data processing device has a processor with a cache memory, a system memory that can be connected to the processor, and a translation unit that can convert an external instruction or a group of external instructions into internal instructions by a translation process. The translation unit is formed by a computing unit assigned to the system memory, for carrying out the translation processes using the system memory.

Abstract: An integrated memory has a memory cell array, which is subdivided into a plurality of separate segments. A first and a second local word line in different segments together form a common global word line. The global word line is decoded via a row decoder. The first and second local word lines are connected to a column decoder in such a way that they can be decoded individually and segment by segment in a manner dependent on a column address. The memory thus allows fast and current-saving activation of a word line.

Abstract: A pulse generator circuit, in particular for use in or for integrated circuits, which, in the usual way, has a number of inverting elements connected in series, a logic combining element and a delay element. A buffer circuit provided in accordance with the invention ensures that a minimum pulse length of the output pulse generated in response to the input signal is ensured even in the case of an input signal of a very short duration.

Abstract: An integrated circuit has a differential amplifier in a basic circuit having two input transistors, a load element and a power source. The power source has an N-type channel MOS transistor whose controlled path is connected to the input transistors and to a supply terminal of the power source. A control terminal of the transistor is connected to a potential that is positive with respect to a reference potential. The supply terminal of the power source is connected to a potential which is negative with respect to the reference potential and which is made available by a voltage source for switching off cell field transistors of a DRAM memory. The gate-source voltage that is increased in this way improves the behavior of the circuit with respect to fluctuations in potential and permits more favorable dimensioning of the transistor.

Abstract: A memory module is described which, externally, has the functionality of DDR SDRAMs and contains two groups of conventional SDRAMs. A conversion device provides for the conversion of clock signals, commands, and data. The conversion device contains a changeover switch, a delay locked loop and buffer memory for addresses and commands and also for the data, which are driven in a suitable manner by the delay locked loop.

Abstract: A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type structure around a central region, in which giant magnetic resistance materials can be provided.

Abstract: An integrated circuit has a differential amplifier in a basic circuit having two input transistors, a load element and a power source. The power source has an N-type channel MOS transistor whose controlled path is connected to the input transistors and to a supply terminal of the power source. A control terminal of the transistor is connected to a potential that is positive with respect to a reference potential. The supply terminal of the power source is connected to a potential which is negative with respect to the reference potential and which is made available by a voltage source for switching off cell field transistors of a DRAM memory. The gate-source voltage that is increased in this way improves the behavior of the circuit with respect to fluctuations in potential and permits more favorable dimensioning of the transistor.

Abstract: A pulse generator circuit, in particular for use in or for integrated circuits, which, in the usual way, has a number of inverting elements connected in series, a logic combining element and a delay element. A buffer circuit provided in accordance with the invention ensures that a minimum pulse length of the output pulse generated in response to the input signal is ensured even in the case of an input signal of a very short duration.

Abstract: In an integrated semiconductor memory with clock-synchronous read and write accesses, the access control device is configured to be switchable between one-way and two-way data strobe mode. The access mode is set using a bond option or a mode register.

Abstract: A dynamic semiconductor memory device of the random access type having an initialization circuit which controls the switch-on operation of the semiconductor memory device and of its circuit components. The initialization circuit supplies a supply voltage stable signal once the supply voltage has been stabilized after the switching-on of the semiconductor memory device. The initialization circuit has an advance detector circuit, which detects a predetermined level state of an externally applied clock control signal chronologically before the supply voltage stable signal is generated and, as a reaction to this, supplies a first enable signal for unlatching the control circuit provided for the proper operation of the semiconductor memory device.