Abstract: A method of forming a resonant cavity device useful for optoelectronic applications is disclosed. A monocrystalline top semiconductor substrate is wafer bonded to a mirror formed over or within a bottom semiconductor substrate. A top mirror is formed over or within the top semiconductor substrate.

Abstract: A photedetector uses a semiconductor on insulator (SOI) substrate having an optical grating over the silicon semiconductor to change the direction of incident light to divert it into the silicon which functions as waveguide. The underlying insulator operates as one boundary of the waveguide and the overlying grating operates as the other. Photodetector electrodes are placed in the silicon, which puts them in close proximity to the carriers that are generated by the light entering the silicon waveguide.

Abstract: A manufacturing technique for making grating features utilizes the etching characteristics for photoresist to provide desirable geometric shapes in close proximity to each other. This results in a grating for optocoupling, which is manufacturable and provides efficient coupling. A silicon waveguide is conveniently achieved using a SOI substrate so that the insulator underlying the silicon provides one material adjoining the silicon with a lower index of refraction than silicon. The top surface of the silicon has the desirable geometric shapes that result also in a lower index of refraction than silicon above the main body of the silicon substrate.

Abstract: A method of forming a resonant cavity device useful for optoelectronic applications is disclosed. A monocrystalline top semiconductor substrate is wafer bonded to a mirror formed over or within a bottom semiconductor substrate. A top mirror is formed over or within the top semiconductor substrate.

Abstract: A manufacturing technique for making grating features utilizes the etching characteristics for photoresist to provide desirable geometric shapes in close proximity to each other. This results in a grating for optocoupling, which is manufacturable and provides efficient coupling. A silicon waveguide is conveniently achieved using a SOI substrate so that the insulator underlying the silicon provides one material adjoining the silicon with a lower index of refraction than silicon. The top surface of the silicon has the desirable geometric shapes that result also in a lower index of refraction than silicon above the main body of the silicon substrate.

Abstract: A photedetector uses a semiconductor on insulator (SOI) substrate having an optical grating over the silicon semiconductor to change the direction of incident light to divert it into the silicon which functions as waveguide. The underlying insulator operates as one boundary of the waveguide and the overlying grating operates as the other. Photodetector electrodes are placed in the silicon, which puts them in close proximity to the carriers that are generated by the light entering the silicon waveguide.