Abstract: A semiconductor device package includes a multilayer substrate including atop layer, a bottom layer and an intermediate layer between the top layer and the bottom layer. The package also includes one or more semiconductor dies embedded in the intermediate layer and conductive connector means to provide a conductive connection from the one or more dies. The conductive connector means extend through the top layer to provide connection means for one or more devices mounted on or adjacent the top layer.

Abstract: A converter comprises a first circuit part and a second circuit part configured to be electrically connected with each other. Each circuit part comprises two or more switches configured to be switched for the power conversion, the switches being semiconductor switches. The two or more switches of the first circuit part are configured for a first switching operation of the first circuit part. The two or more switches of the second circuit part are configured for a second switching operation of the second circuit part. The first switching operation causes a greater electrical power loss compared to the second switching operation. The two circuit parts are configured such that the first circuit part is configured to operate at a higher operating temperature compared to the second circuit part.

Abstract: A power converter may include: a first terminal, a second terminal and a third terminal, and an AC terminal for coupling an AC voltage; a first controllable unidirectional switching circuit; a second controllable unidirectional switching circuit; a controllable bidirectional switching circuit; a first diode connected in a forward current direction between the third terminal and the first controllable unidirectional switching circuit; and a second diode connected in a forward current direction between the second controllable unidirectional switching circuit and the third terminal.

Abstract: A power converter assembly includes a semi-conductor module, a heat sink mechanically connected to the semi-conductor module, a first busbar assembly on a first side of the heat sink, and a second busbar assembly on a second side of the heat sink opposite from the first side. The first and second busbar assemblies are electrically connected to one another. A power converter assembly includes a plurality of sets of semi-conductor modules, a common heat sink mechanically connected to each semi-conductor module, a first busbar assembly on a first side of the common heat sink, and a second busbar assembly on a second side of the common heat sink opposite from the first side. The first and second busbar assemblies are electrically connected to one another.

Abstract: There is disclosed a circuit breaker arrangement for interrupting a current flowing through a direct current (DC) transmission line including a semiconductor switching device and a pulse injection circuit configured to inductively inject into the transmission line a pulse current that opposes the current flowing through the transmission line to thereby reduce the current in the transmission line to cause the semiconductor switching device to turn-off to interrupt the path for the current flow through the transmission line.

Abstract: A semiconductor device package includes a multilayer substrate including atop layer, a bottom layer and an intermediate layer between the top layer and the bottom layer. The package also includes one or more semiconductor dies embedded in the intermediate layer and conductive connector means to provide a conductive connection from the one or more dies. The conductive connector means extend through the top layer to provide connection means for one or more devices mounted on or adjacent the top layer.

Abstract: There is disclosed a circuit breaker arrangement for interrupting a current flowing through a direct current (DC) transmission line including a semiconductor switching device and a pulse injection circuit configured to inductively inject into the transmission line a pulse current that opposes the current flowing through the transmission line to thereby reduce the current in the transmission line to cause the semiconductor switching device to turn-off to interrupt the path for the current flow through the transmission line.

Abstract: A power converter assembly includes a semi-conductor module, a heat sink mechanically connected to the semi-conductor module, a first busbar assembly on a first side of the heat sink, and a second busbar assembly on a second side of the heat sink opposite from the first side. The first and second busbar assemblies are electrically connected to one another. A power converter assembly includes a plurality of sets of semi-conductor modules, a common heat sink mechanically connected to each semi-conductor module, a first busbar assembly on a first side of the common heat sink, and a second busbar assembly on a second side of the common heat sink opposite from the first side. The first and second busbar assemblies are electrically connected to one another.

Abstract: A layered DC busbar structure comprises a positive DC substrate (26) arranged to carry a positive DC voltage, the positive DC substrate (26) being arranged on a first layer (24), and a negative DC substrate (30) arranged to carry a negative DC voltage, the negative DC substrate (30) being arranged on a second layer (28). A DC neutral substrate (36) is arranged on a central layer (32) between the first and second layers (24, 28). An AC substrate (34) is arranged to carry an AC voltage, the AC substrate (34) being arranged on the central layer (32) and substantially coplanar with the DC neutral substrate (36).

Abstract: A layered DC busbar structure includes a positive DC substrate arranged to carry a positive DC voltage, the positive DC substrate being arranged on a first layer, and a negative DC substrate arranged to carry a negative DC voltage, the negative DC substrate being arranged on a second layer. A DC neutral substrate is arranged on a central layer between the first and second layers. An AC substrate is arranged to carry an AC voltage, the AC substrate being arranged on the central layer and substantially coplanar with the DC neutral substrate.

Abstract: A system and method includes parallel power converters, at least one current sensor, and a first feedback control circuit. A first power converter is configured to convert a first input power to a first output power, and is controlled using pulse width modulation having a first switching period. One or more second power converters are connected in parallel with the first power converter and configured to convert a second input power to a second output power. The first output power and the second output power are provided to a load. The at least one current sensor is positioned to sense first output current of the first output power, and the first feedback control circuit is configured to calculate a first metric based on the first sensed current at each of a plurality of first edges of each half switching period of the first switching period, and at intermediate points between each of the plurality of first edges.