Abstract: An optoelectronic module includes a control element, at least one temperature sensor, and at least one semiconductor emitter unit. The semiconductor emitter unit includes at least a first emitter and a second emitter. The first emitter is intended to emit electromagnetic radiation in a first wavelength range. The second emitter is intended to emit electromagnetic radiation in a second wavelength range different from the first wavelength range. The control element includes a memory unit and a driver output for each emitter. The temperature sensor determines a temperature. Each emitter is assigned a non-linear characteristic curve in the memory unit. The control element is intended to drive the emitters independently of each other by means of a respective driver output. The control element controls the emitters depending on the determined temperature and the respective characteristic curve of the emitter.

Abstract: An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: A light-emitting component is disclosed. In an embodiment a light-emitting component includes at least four light sources configured to emit light of different wavelength ranges in pairs and a control device configured to operate the light sources independently of one another in such a way that light from at least two of the light sources is mixed to form a mixed light and adjust an mv,mel,D65 value of the mixed light, wherein the at least four light sources include a first light source configured to emit electromagnetic radiation with a dominant wavelength of at most 450 nm, a second light source configured to emit electromagnetic radiation with a dominant wavelength of at least 480 nm and at most 520 nm or a dominant wavelength of at least 455 nm and at most 470 nm, a third light source configured to emit electromagnetic radiation in a spectral range of green light, and a fourth light source configured to emit electromagnetic radiation in a spectral range of yellow and/or amber light.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: A light emitting device includes a radiation source for the emission of electromagnetic radiation and a converter element on which the electromagnetic radiation impinges in a first surface region and which, excited by the impinged electromagnetic radiation, emits visible light into an environment in a second surface region which differs at least partially from the first surface region. The wavelength of the light emitted into the environment differs from the wavelength of the electromagnetic radiation impinged on the converter element. The converter element includes a luminous element including a textile with a converter material. The converter material due to excitation by the electromagnetic radiation with a first wavelength emits visible light with a second wavelength differing from the first wavelength. The radiation source realizes a background illumination for the converter element. The first surface region is formed by a side surface or a back surface of the converter element.

Abstract: In an embodiment an optoelectronic lighting device includes a support and at least one pixel having three illuminating elements, wherein the illuminating elements of the pixel are arranged on an upper side of the support, each illuminating element having a center point, wherein the illuminating elements are arranged around a central point lying on the upper side of the support such that the center points of the illuminating elements lie on a circular path with a defined radius revolving around the central point, wherein each illuminating element includes a base body with a quadrangular base surface, a corner of the base body of each illuminating element lying at least approximately on a line which extends between the center point of the respective illuminating element and the central point, and/or wherein each illuminating element includes a base body with a square base surface, the illuminating elements being arranged on the upper side of the support such that mutually opposite side surfaces of the base body

Abstract: A method for operating an optoelectronic semiconductor device. The semiconductor device includes a first optoelectronic semiconductor chip for generating, for example, blue light, an optional second optoelectronic semiconductor chip for generating, for example, green light, and a third optoelectronic semiconductor chip for generating, for example, red light. The semiconductor device also includes a driver unit which supplies the semiconductor chips with current during operation. The third semiconductor chip is operated on the basis of a temperature-brightness characteristic curve stored in the driver unit. The temperature-brightness characteristic curve is configured for a minimum color location deviation over an intended operating temperature range, relative to at least one reference color location.

Abstract: An optoelectronic semiconductor chip, a method for manufacturing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having an emission side, the emission side comprising a plurality of emission fields, partition walls on the emission side in a region between two adjacent emission fields and a conversion element on one or more emission fields, wherein the conversion element includes a matrix material with first phosphor particles incorporated therein, wherein the first phosphor particles are sedimented in the matrix material such that a mass fraction of the first phosphor particles is greater in a lower region of the conversion element facing the semiconductor layer sequence than in a remaining region of the conversion element, and wherein the partition walls are attached to the emission side without any additional connectors.

Abstract: A light-emitting component is disclosed. In an embodiment a light-emitting component includes at least four light sources configured to emit light of different wavelength ranges in pairs and a control device configured to operate the light sources independently of one another in such a way that light from at least two of the light sources is mixed to form a mixed light and adjust an mv,mel,D65 value of the mixed light, wherein the at least four light sources include a first light source configured to emit electromagnetic radiation with a dominant wavelength of at most 450 nm, a second light source configured to emit electromagnetic radiation with a dominant wavelength of at least 480 nm and at most 520 nm or a dominant wavelength of at least 455 nm and at most 470 nm, a third light source configured to emit electromagnetic radiation in a spectral range of green light, and a fourth light source configured to emit electromagnetic radiation in a spectral range of yellow and/or amber light.