Abstract: An inverter for an electric machine. The inverter has at least one semiconductor switch half-bridge. The inverter also has a current sensor, which is designed to detect a phase current generated by the at least one semiconductor switch half-bridge, depending on a magnetic field generated by the phase current. The inverter has a voltage source for supplying power to the current sensor. The voltage source is designed to supply the current sensor, in particular in a referenced manner, with an in particular constant supply voltage relative to the, in particular pulse-width-modulated, phase potential of the semiconductor switch half-bridge.

Abstract: A method and a circuit arrangement for ascertaining a junction temperature of a semiconductor component including an insulated gate. The method includes: recharging an input capacitance of the semiconductor component using a current-controlled gate driver at a predefined first time, and ascertaining a junction temperature of the semiconductor component based on information about a voltage-dependent behavior of the input capacitance of the semiconductor component and based on a level of an internal gate resistor of the semiconductor component at a second time which follows the first time, at which a current build-up phase of a gate current generated by the gate driver for recharging the input capacitance has ended and at which a substantially constant gate current is present.

Abstract: An inverter unit. The inverter unit includes: a switch; an intermediate circuit; and a component. The inverter unit is configured to switch the switch on the basis of a predetermined switching sequence in order to drain the intermediate circuit. The predetermined switching sequence is configured to generate a current drop in the intermediate circuit at a substantially constant change in order to introduce a thermal energy, generated by a short circuit, into the inverter unit in order to determine an aging of the component.

Abstract: A commutation cell for an inverter. The commutation cell includes a ceramic circuit carrier, and a semiconductor switch half bridge. The commutation cell also includes a current sensor, which is designed and arranged for detecting a phase current of the commutation cell. The commutation cell includes a flexible circuit board, which is in particular integrally bonded to the circuit carrier and is arranged parallel to the circuit carrier. The circuit carrier includes a conducting track, which is designed to conduct the output current of the half bridge. The current sensor is electrically connected to the flexible circuit board and arranged to detect a magnetic field generated by the conducting track through which in particular current flows, and is designed to generate a current signal that represents the current flowing in the conducting track.

Abstract: A method and device for reducing voltage loads of semiconductor components of an inverter. The method includes: ascertaining a request to charge a battery of an electric system including the battery, the inverter, and an electric machine. The inverter including a series connection including a first and a second semiconductor component, and being configured to convert a direct voltage provided by the battery into an alternating voltage for the electric machine, and adapt a gate voltage of the first semiconductor component and/or of the second semiconductor component to interrupt a current flow between the battery and the electric machine during the charging. A voltage load of a gate oxide layer of the semiconductor components is reduced by decreasing the gate voltages of the first semiconductor component and of the second semiconductor component and/or a voltage load of a drain-source path of the semiconductor components being matched to one another.

Abstract: A power module. The power module includes a first circuit carrier having power conductor structures, and a second circuit carrier in parallel therewith and having at least one further power conductor structure electrically connected at an internal contact region via a spacer element, which forms a first electrically symmetrical current star point, to an internal contact region of one of the power conductor structures. A control signal conductor structure is on a second side of the second circuit carrier. Semiconductor switches are arranged and electrically contacted between the first circuit carrier and the second circuit carrier. Control connections of the semiconductor switches are electrically connected to the control signal conductor structure. A common conductor structure is arranged on the second side of the second circuit carrier. Control connections of the semiconductor switches are electrically connected to the common conductor structure.

Abstract: A power module. The power module includes a first circuit carrier and at least one second circuit carrier. The first circuit carrier has power conductor structures on a first side which form a first power level in which external contact regions are arranged. The second circuit carrier is arranged spatially in parallel with the first circuit carrier and has at least one further power conductor structure on a first side facing the first side of the first circuit carrier, which forms a second power level. The further power conductor structure is electrically connected at an internal contact region to an internal contact region of one of the power conductor structures of the first circuit carrier. A control signal conductor structure is arranged on the electrically insulating layer on a second side of the second circuit carrier, and forms a signal level.

Abstract: A power module, in particular a commutation cell for an inverter. The power module includes a circuit carrier, in particular a ceramic circuit carrier, and at least one or only one semiconductor switch half-bridge with two semiconductor switches, in particular power semiconductor switches, wherein the semiconductor switches are in particular integrally connected to the circuit carrier. The power module of the above-mentioned type includes a flexible circuit board, which is in particular integrally connected to the circuit carrier. The flexible circuit board is arranged in the area of the semiconductor switches. The power module comprises a temperature sensor, which is integrally connected to the flexible circuit board and is designed and arranged to sense a temperature of the circuit carrier in the area of the semiconductor switches, and in particular thus indirectly a temperature of the semiconductor switches, through the flexible circuit board.

Abstract: A power module. The power module has a substrate and at least one power transistor situated on a lower side of the substrate, and at least one temperature sensor situated in the power module. At least one primary temperature sensor is situated on an upper side opposite the at least one power transistor or in an inner substrate layer situated above the at least one power transistor. At least one reference temperature sensor for providing a comparison temperature is situated at a distance from all power transistors, on the upper side or on one of the inner substrate layers. As a result, the transistor temperature can be measured closer to the source of the heat and a reference temperature is provided for detecting resistance changes due to material aging.

Abstract: A driver circuit for a low-inductance power module that has a connection and an output. The connection is connectable to the source contact of a power transistor and the output is connectable to the gate contact of the power transistor. The driver circuit is configured to produce, in a first operating mode, a first gate-source voltage for the gate contact of the power transistor and to provide the first gate-source voltage at the output of the driver circuit. The driver circuit is also configured to produce, in a second operating mode, during at least one preset minimum time span, a lower second gate-source voltage for the gate contact of the power transistor and to provide the second gate-source voltage at the output of the driver circuit.

Abstract: A method and device for adapting temperatures of semiconductor components. The device includes a first and second semiconductor component, and an evaluation unit. The evaluation unit is configured to ascertain a first and second temperature of the first and second semiconductor component, respectively, calculate a first and second temperature deviation, which represents a deviation of the first and second temperature from a reference temperature, respectively, and adapt a first gate voltage of the first semiconductor component and/or a second gate voltage of the second semiconductor component until the first temperature deviation and the second temperature deviation are smaller than or equal to a predefined maximum allowable temperature deviation from the reference temperature. The adaptation takes place only when a predefined allowable control range for the respective gate voltage is not exceeded, and when the first temperature and/or the second temperature is/are greater than the reference temperature.

Abstract: A method and device for reducing voltage loads of semiconductor components of an inverter. The method includes: ascertaining a request to charge a battery of an electric system including the battery, the inverter, and an electric machine. The inverter including a series connection including a first and a second semiconductor component, and being configured to convert a direct voltage provided by the battery into an alternating voltage for the electric machine, and adapt a gate voltage of the first semiconductor component and/or of the second semiconductor component to interrupt a current flow between the battery and the electric machine during the charging. A voltage load of a gate oxide layer of the semiconductor components is reduced by decreasing the gate voltages of the first semiconductor component and of the second semiconductor component and/or a voltage load of a drain-source path of the semiconductor components being matched to one another.

Abstract: A driver circuit for a low-inductance power module that has a connection and an output. The connection is connectable to the source contact of a power transistor and the output is connectable to the gate contact of the power transistor. The driver circuit is configured to produce, in a first operating mode, a first gate-source voltage for the gate contact of the power transistor and to provide the first gate-source voltage at the output of the driver circuit. The driver circuit is also configured to produce, in a second operating mode, during at least one preset minimum time span, a lower second gate-source voltage for the gate contact of the power transistor and to provide the second gate-source voltage at the output of the driver circuit.

Abstract: A power module for producing structure-borne sound. The power module includes: a control unit and a first substrate, the control unit being situated on the first substrate; at least one first power semiconductor and at least one second power semiconductor, the first substrate being situated on the at least one first power semiconductor and on the at least one second power semiconductor; a first metal connection, a second substrate, and a second metal connection, the first metal connection electrically connecting the first substrate and the second substrate, and the second metal connection being situated below the second substrate, wherein the second substrate has a piezoelectric material and the control unit is set up to excite the piezoelectric material of the second substrate so that a structure-borne sound signal is produced.

Abstract: A power module. The power module includes a substrate and at least one power transistor arranged on a bottom side of the substrate. The power module includes at least one power connection connected to the substrate. A conductor loop for measuring temperature is arranged on an inner or outer substrate layer or a top side opposite the power transistor.