Abstract: Devices and techniques for voltage degradation aware NAND array management are disclosed herein. Voltage to a NAND device is monitored to detect a voltage event. A history of voltage events is modified with the voltage event. A voltage condition is observed from the history of voltage events. An operational parameter of a NAND array in the NAND device is then modified in response to the voltage condition.

Abstract: The invention is directed to certain novel compounds. Specifically, the invention is directed to compounds of formula (I): and salts thereof. The compounds of the invention are inhibitors of kinase activity, in particular PI3-kinase activity.

Abstract: Devices and techniques for increased NAND performance under high thermal conditions are disclosed herein. An indicator of a high-temperature thermal condition for a NAND device may be obtained. A workload of the NAND device may be measured in response to the high-temperature thermal condition. Operation of the NAND device may then be modified based on the workload and the high-temperature thermal condition.

Abstract: The present invention relates to bifunctional compounds, which find utility as modulators of targeted ubiquitination, especially inhibitors of a variety of polypeptides and other proteins which are degraded and/or otherwise inhibited by bifunctional compounds according to the present invention. In particular, the present invention is directed to compounds, which contain on one end a VHL ligand which binds to the ubiquitin ligase and on the other end a moiety which binds a target protein such that the target protein is placed in proximity to the ubiquitin ligase to effect degradation (and inhibition) of that protein. The present invention exhibits a broad range of pharmacological activities associated with compounds according to the present invention, consistent with the degradation/inhibition of targeted polypeptides.

Abstract: Disclosed in some examples are methods, systems, and machine readable mediums that dynamically adjust the size of an L2P cache in a memory device in response to observed operational conditions. The L2P cache may borrow memory space from a donor memory location, such as a read or write buffer. For example, if the system notices a high amount of read requests, the system may increase the size of the L2P cache at the expense of the write buffer (which may be decreased). Likewise, if the system notices a high amount of write requests, the system may increase the size of the L2P cache at the expense of the read buffer (which may be decreased).

Abstract: Disclosed in some examples are methods, systems, memory devices, machine readable mediums configured to intentionally degrade NAND performance when a value of a NAND health metric indicates a potential for failure to encourage users to replace or backup their devices before data loss occurs. For example, the system may track a NAND health metric and when that metric reaches a predetermined threshold or state, the system may intentionally degrade performance. This performance degradation may be more effective than a warning to effect device backup or replacement.

Abstract: Disclosed in some examples are methods, systems, machine-readable mediums, and NAND devices which create logical partitions when requested to create a physical partition. The controller on the NAND mimics the creation of the physical partition to the host device that requested the physical partition. Thus, the host device sees the logical partition as a physical partition. Despite this, the NAND does not incur the memory storage expense of creating a separate partition, and additionally the NAND can borrow cells for overprovisioning from another partition. In these examples, a host device operating system believes that a physical partition has been created, but the NAND manages the memory as a contiguous pool of resources. Thus, a logical partition is created at the NAND memory controller level—as opposed to at the operating system level.

Abstract: Devices and techniques for host accelerated operations in managed NAND devices are described herein. A read request is received at a controller of a NAND device. Here, the read request includes a logical address and a physical address. A a verification component that corresponds to the physical address is retrieved a NAND array of the NAND device. A verification of the read request is computed using the logical address, the physical address, and the verification component. A read operation is then modified based on the verification.

Abstract: Devices and techniques to reduce corruption of received data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, in a first mode until the received data exceeds a threshold amount, and to transition from the first mode to a second mode after the received data exceeds the threshold amount.

Abstract: Devices and techniques for efficient allocation of storage connection resources are disclosed herein. An active trigger for a storage device is received when the storage device is in an idle state. A workload that corresponds to the storage device is measured to determine that the workload meets a threshold. Connection parameters, for a connection to the storage device, are negotiated based on the workload in response to receipt of the active trigger and the workload meeting the threshold. The workload is then executed on the storage device via the connection using the connection parameters.

Abstract: Devices and techniques for memory constrained translation table management are disclosed herein. A level of a translation table is logically segmented into multiple segments. Here, a bottom level of the translation table includes a logical to physical address pairing for a portion of a storage device and other levels of the translation table include references within the translation table. The multiple segments are written to the storage device. A first segment of the multiple segments is loaded to byte-addressable memory. A request for an address translation is received and determined to be for an address referred to by a second segment of the multiple segments. The first segment is then replaced with the second segment in the byte-addressable memory and the request is fulfilled using the second segment to locate a lower level of the translation table that includes the address translation.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The SLC memory cells serve as a high-speed cache providing SLC level performance with the storage capacity of a memory device with MLC memory cells. The proportion of cells configured as MLC vs the proportion that are configured as SLC storage may be configurable, and in some examples, the proportion may change during usage based upon configurable rules based upon memory device metrics. In some examples, when the device activity is below an activity threshold, the memory device may skip the SLC cache and place the data directly into the MLC storage to reduce power consumption.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: Devices and techniques for voltage degradation aware NAND array management are disclosed herein. Voltage to a NAND device is monitored to detect a voltage event. A history of voltage events is modified with the voltage event. A voltage condition is observed from the history of voltage events. An operational parameter of a NAND array in the NAND device is then modified in response to the voltage condition.

Abstract: Devices and techniques for implementing quality-of-service (QoS) parameters in a managed memory device having a number of memory dies are disclosed herein. A memory controller can receive instructions from a host device, determine an initial priority for each instruction using QoS parameters, and allocate the received instructions to the number of memory dies using the initial priority. The memory controller can maintain separate schedules for each of the number or memory dies, update the initial priority for each instruction with the separate schedules, and maintain each of the separate schedules using the updated priority for each instruction in the respective separate schedule.

Abstract: Disclosed in some examples are memory devices which feature customizable Single Level Cell (SLC) and Multiple Level Cell (MLC) configurations. The configuration (e.g., the size and position) of the SLC cache may have an impact on power consumption, speed, and other performance of the memory device. An operating system of an electronic device to which the memory device is installed may wish to achieve different performance of the device based upon certain conditions detectable by the operating system. In this way, the performance of the memory device can be customized by the operating system through adjustments of the performance characteristics of the SLC cache.

Abstract: Devices and techniques to reduce corruption of preloaded data during assembly are disclosed herein. A memory device can perform operations to store received data, including preloaded data, up to a threshold amount on a memory array in a reflow-protection mode, and to transition from the reflow-protection mode to a normal-operation mode after the initial data exceeds the threshold amount.

Abstract: Disclosed in some examples are systems, methods, memory devices, and machine readable mediums for a fast secure data destruction for NAND memory devices that renders data in a memory cell unreadable. Instead of going through all the erase phases, the memory device may remove sensitive data by performing only the pre-programming phase of the erase process. Thus, the NAND doesn't perform the second and third phases of the erase process. This is much faster and results in data that cannot be reconstructed. In some examples, because the erase pulse is not actually applied and because this is simply a programming operation, data may be rendered unreadable at a per-page level rather than a per-block level as in traditional erases.

Abstract: Devices and techniques for random access memory power savings are disclosed herein. Data contained in RAM is compressed in response to obtaining a trigger. Here, the RAM organized into several discrete hardware components with a corresponding power control. The data contained in the RAM is replaced with the compressed data to free a discrete hardware component of the RAM. The discrete hardware component is then powered down via the corresponding power control.

Abstract: The invention is directed to certain novel compounds. Specifically, the invention is directed to compounds of formula (I): and salts thereof. The compounds of the invention are inhibitors of kinase activity, in particular PI3-kinase activity.