Patents by Inventor Sebastien Bandiera
Sebastien Bandiera has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11939273Abstract: A limestone calcined clay cement construction composition comprises a) a cementitious binder comprising one or more calcium silicate mineral phases and one or more calcium aluminate mineral phases, and having a Blaine surface area of at least 3800 cm2/g; b) a supplementary cementitious material having a Dv90 of less than 200 ?m comprising (b-1) a calcined clay material and (b-2) a carbonate rock powder in a weight ratio of (b-1) to (b-2) in the range of 0.5 to 2; c) optionally, an extraneous aluminate source; d) a sulfate source; and e) a polyol. The composition contains a controlled amount of available aluminate, calculated as Al(OH)4?, from the calcium aluminate mineral phases plus the optional extraneous aluminate source; and the molar ratio of total available aluminate to sulfate is 0.4 to 2.0. The construction composition further comprises f) an ettringite formation controller.Type: GrantFiled: August 25, 2021Date of Patent: March 26, 2024Assignee: CONSTRUCTION RESEARCH &TECHNOLOGY GMBHInventors: Massimo Bandiera, Peter Schwesig, Bernhard Sachsenhauser, Sebastien Dhers
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MLU cell for sensing an external magnetic field and a magnetic sensor device comprising the MLU cell
Patent number: 10712399Abstract: A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.Type: GrantFiled: November 18, 2015Date of Patent: July 14, 2020Inventor: Sebastien Bandiera -
Patent number: 10665774Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between ?10 ppm and +10 ppm or more negative than ?10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.Type: GrantFiled: March 6, 2017Date of Patent: May 26, 2020Inventor: Sebastien Bandiera
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Patent number: 10330749Abstract: A magnetic logic unit (MLU) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. The tunnel barrier layer is configured for generating an indirect exchange coupling between the tunnel barrier layer and the sense layer providing an additional exchange bias field.Type: GrantFiled: December 23, 2015Date of Patent: June 25, 2019Assignee: CROCUS TECHNOLOGY SAInventor: Sebastien Bandiera
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Publication number: 20190036015Abstract: A magnetoresistive element including: a storage layer having a first storage magnetostriction; a sense layer having a first sense magnetostriction; and a barrier layer between and in contact with the storage and sense layer. The magnetoresistive element also includes a compensating ferromagnetic layer having a second magnetostriction different from the first storage magnetostriction and/or sense magnetostriction, and adapted to compensate the first storage magnetostriction and/or the first sense magnetostriction so that a net magnetostriction of the storage layer and/or sense layer is adjustable between ?10 ppm and +10 ppm or more negative than ?10 ppm by adjusting a thickness of the compensating ferromagnetic layer. The present disclosure also concerns a magnetic device comprising the magnetoresistive element.Type: ApplicationFiled: March 6, 2017Publication date: January 31, 2019Inventor: Sebastien Bandiera
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Patent number: 10191719Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.Type: GrantFiled: February 22, 2016Date of Patent: January 29, 2019Assignee: CROCUS TECHNOLOGY SAInventors: Sebastien Bandiera, Quentin Stainer
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Publication number: 20180336014Abstract: A programmable magnetic device for generating random numbers during a programming operation, including an array of a plurality of magnetic tunnel junctions. Each magnetic tunnel junction includes a reference layer having a reference magnetization; a tunnel barrier layer; and a storage layer having a storage magnetization. The programmable magnetic device is arranged such that, during the programming operation, the storage magnetization is orientable in an unstable magnetization configuration and relaxable randomly in one of a plurality of stable or metastable configurations from the unstable magnetization configuration.Type: ApplicationFiled: February 22, 2016Publication date: November 22, 2018Inventors: Sebastien Bandiera, Quentin Stainer
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Patent number: 9995798Abstract: A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.Type: GrantFiled: December 23, 2015Date of Patent: June 12, 2018Inventor: Sebastien Bandiera
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Patent number: 9989599Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.Type: GrantFiled: October 1, 2014Date of Patent: June 5, 2018Assignee: CROCUS TECHNOLOGY SAInventor: Sebastien Bandiera
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Patent number: 9983275Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.Type: GrantFiled: October 1, 2014Date of Patent: May 29, 2018Assignee: CROCUS TECHNOLOGY SAInventor: Sebastien Bandiera
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Publication number: 20180003781Abstract: A magnetic sensor device for sensing an external magnetic field includes a plurality of MLU cells, each MLU cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. The stress-induced magnetic anisotropy induced by the stress inducing device corresponds substantially to a net magnetic anisotropy of the at least one of the sense layer and the storage layer. The magnetic sensor device can be programmed easily and has improved sensitivity.Type: ApplicationFiled: December 23, 2015Publication date: January 4, 2018Inventor: Sebastien BANDIERA
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Publication number: 20170371008Abstract: A magnetic logic unit (MLU) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. The tunnel barrier layer is configured for generating an indirect exchange coupling between the tunnel barrier layer and the sense layer providing an additional exchange bias field.Type: ApplicationFiled: December 23, 2015Publication date: December 28, 2017Applicant: CROCUS Technology SAInventor: Sebastien BANDIERA
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Patent number: 9818465Abstract: A self-referenced MRAM cell comprises a first portion of a magnetic tunnel junction including a storage layer; a second portion of the magnetic tunnel junction portion including a tunnel barrier layer, a sense layer and a seed layer; the seed layer comprising a material having high spin-orbit coupling such that passing a sense current along the plane of the sense layer and/or seed layer exerts a spin-orbit torque adapted for switching a sense magnetization of the sense layer. A memory device comprising a plurality of the MRAM cells and a method for operating the memory device are also disclosed.Type: GrantFiled: September 8, 2014Date of Patent: November 14, 2017Assignee: CROCUS TECHNOLOGY SAInventor: Sebastien Bandiera
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MLU CELL FOR SENSING AN EXTERNAL MAGNETIC FIELD AND A MAGNETIC SENSOR DEVICE COMPRISING THE MLU CELL
Publication number: 20170322263Abstract: A MLU cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. The present disclosure further concerns a magnetic sensor device for sensing an external magnetic field, including a plurality of the MLU cells.Type: ApplicationFiled: November 18, 2015Publication date: November 9, 2017Inventor: Sebastien BANDIERA -
Patent number: 9728711Abstract: MRAM cell including a magnetic tunnel junction including a reference layer, a storage layer having a storage magnetization, a tunnel barrier layer between the reference and the storage layers; and an antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and free it at a high temperature threshold. The storage layer includes a first ferromagnetic layer in contact with the tunnel barrier layer, a second ferromagnetic layer in contact with the antiferromagnetic layer, and a low saturation magnetization storage layer including a ferromagnetic material and a non-magnetic material. The MRAM cell can be written with improved reliability.Type: GrantFiled: April 11, 2014Date of Patent: August 8, 2017Assignee: CROCUS TECHNOLOGY SAInventors: Sebastien Bandiera, Ioan Lucian Prejbeanu
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Patent number: 9508920Abstract: A voltage-controlled spintronic device includes a magnetic layer having an effective anisotropy Keff; a non-magnetic insulating layer; a contact layer; the magnetic layer having an anisotropy switching threshold such that application of a polarization voltage Vmax allows switching of the effective anisotropy Keff from a direction perpendicular to the reference plane to a direction in the reference plane or vice versa, the magnetic layer including a first layer, with thickness tB, having a volume anisotropy KVB; a second layer, with thickness tA, having a surface anisotropy KSA and a volume anisotropy KVA; the surface anisotropy KSA and the volume anisotropies KVA and KVB respecting, over a given operating temperature range: Min(KSA(V=0), KSA(V=Vmax))<?{KVBtB+KVAtA)<Max(KSA(V=0), KSA(V=Vmax)). KSA(V=0) is the surface anisotropy when no polarization voltage is applied. KSA(V=Vmax) is the surface anisotropy when a polarization voltage Vmax is applied.Type: GrantFiled: July 18, 2014Date of Patent: November 29, 2016Assignees: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS), UNIVERSITÉ JOSEPH FOURIERInventors: Bernard Dieny, Hélène Bea, Sébastien Bandiera
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Publication number: 20160252591Abstract: Method for sensing an external magnetic field using a magnetic sensor cell including: a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A field line is configured for passing a field current for providing a sense magnetic field adapted for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The external magnetic field includes an in-plane component oriented parallel to the plane of the sense layer and an out-of-plane component perpendicular to the plane of the sense layer. The method includes sensing the out-of-plane component; and sensing the in-plane component.Type: ApplicationFiled: October 1, 2014Publication date: September 1, 2016Inventor: Sebastien Bandiera
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Patent number: 9431601Abstract: Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time.Type: GrantFiled: November 19, 2013Date of Patent: August 30, 2016Assignee: CROCUS TECHNOLOGY SAInventors: Sebastien Bandiera, Ioan Lucian Prejbeanu
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Publication number: 20160240773Abstract: A mechanism is provided for a thermally assisted magnetoresistive random access memory device (TAS-MRAM) with reduced power for reading and writing. A tunnel barrier is disposed adjacent to a ferromagnetic sense layer and a ferromagnetic storage layer, such that the tunnel barrier is sandwiched between the ferromagnetic sense layer and the ferromagnetic storage layer. An antiferromagnetic pinning layer is disposed adjacent to the ferromagnetic storage layer. The pinning layer pins a magnetic moment of the storage layer until heating is applied. The storage layer includes a non-magnetic material to reduce a storage layer magnetization as compared to not having the non-magnetic material. The sense layer includes the non-magnetic material to reduce a sense layer magnetization as compared to not having the non-magnetic material.Type: ApplicationFiled: April 28, 2016Publication date: August 18, 2016Inventors: Anthony J. Annunziata, Sebastien Bandiera, Lucien Lombard, Lucian Prejbeanu, Philip L. Trouilloud, Daniel C. Worledge
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Publication number: 20160238676Abstract: A magnetic sensor cell includes a magnetic tunnel junction including a reference layer having a reference magnetization oriented parallel to the plane of the reference layer, a sense layer having a sense magnetization, and a tunnel barrier layer between the sense and reference layers. A magnetic device is configured for providing a sense magnetic field for aligning the sense magnetization. The sense layer magnetization is orientable between a direction parallel to the plane of the sense layer and a direction perpendicular to the plane of the sense layer when the sense magnetic field is provided. The magnetic sensor cell can be used for sensing an external magnetic field including a component oriented parallel to the plane of the sense layer and a component oriented perpendicular to the plane of the sense layer.Type: ApplicationFiled: October 1, 2014Publication date: August 18, 2016Applicant: Crocus Technology SAInventor: Sebastien Bandiera