Patents by Inventor Sebastien Bernard

Sebastien Bernard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12228604
    Abstract: A method for monitoring an ideal diode comprises controlling a source-gate voltage of a MOSFET of the ideal diode such that the ideal diode can be changed between an off and an on state with a first target value for a source-drain voltage. To detect error states, the source-drain voltage and the source-gate voltage are measured. A check is carried out to determine whether the source-drain voltage reaches the first target value within predefined error limits in the on state. A test mode is carried out, in which a second target value, smaller than the first target value, is set for the source-drain voltage. A check is carried out to determine whether the source-gate voltage reaches an upper threshold value when the test mode is being carried out. An error signal is output when the first target value and/or the upper threshold value is/are not reached.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: February 18, 2025
    Assignee: Continental Automotive Technologies GmbH
    Inventors: Sebastien Bernard, Timo Dietz
  • Publication number: 20240392428
    Abstract: A method of manufacturing a pump element for a chamber under partial gas pressure, the pump element including a substrate covered with a getter layer based on metallic material, including the following steps: placing, in a vacuum processing chamber, the substrate and a target in said metallic material, propelling ions against the target to extract particles of metallic material therefrom and project them against a surface of the substrate at an oblique angle of incidence. A chamber under partial gas pressure containing a getter produced in this way.
    Type: Application
    Filed: October 14, 2022
    Publication date: November 28, 2024
    Inventors: Bruno LETOURNEUR, Sébastien BERNARD, Miguel SANCHEZ, Guillaume BARNERIAS
  • Publication number: 20230228804
    Abstract: A method for monitoring an ideal diode comprises controlling a source-gate voltage of a MOSFET of the ideal diode such that the ideal diode can be changed between an off and an on state with a first target value for a source-drain voltage. To detect error states, the source-drain voltage and the source-gate voltage are measured. A check is carried out to determine whether the source-drain voltage reaches the first target value within predefined error limits in the on state. A test mode is carried out, in which a second target value which smaller than the first target value is set for the source-drain voltage. A check is carried out to determine whether the source-gate voltage reaches an upper threshold value when the test mode is being carried out. An error signal is output when the first target value and/or the upper threshold value is/are not reached.
    Type: Application
    Filed: June 2, 2021
    Publication date: July 20, 2023
    Applicant: Continental Automotive Technologies GmbH
    Inventors: Sebastien Bernard, Timo Dietz
  • Publication number: 20130309063
    Abstract: A turbine engine stage including a rotor wheel including a plurality of blades surrounded on an outside by a casing including a layer of abradable material on its inside surface facing free ends of the blades. At least one plane sensor for measuring clearance at blade tips is carried by the inside surface of the casing and is covered by the layer of abradable material.
    Type: Application
    Filed: January 25, 2012
    Publication date: November 21, 2013
    Applicant: SNECMA
    Inventors: Philippe Charles Octave Buyle, Andre Leroux, David Tourin, Christian Lanneree, Philippe Sarnago, Sebastien Bernard