Patents by Inventor Sebastien Dine

Sebastien Dine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8206604
    Abstract: A method for confining plasma within a plasma processing chamber while processing a substrate is provided. The method includes igniting the plasma within a plasma generating area, wherein the plasma generating area is surrounded by a set of confinement rings. The method also includes providing a chamber wall outside of the set of confinement rings. The method further includes providing a dielectric liner electrode arrangement positioned between the chamber wall and the set of confinement rings, wherein the dielectric liner electrode arrangement having an electrode encapsulated within a dielectric liner, the dielectric liner electrode arrangement being coupled with the chamber wall to create a modified chamber wall. The method yet also includes providing a parallel LC circuit arrangement, the parallel LC circuit arrangement being coupled between the dielectric liner electrode arrangement and the chamber wall.
    Type: Grant
    Filed: July 19, 2010
    Date of Patent: June 26, 2012
    Assignee: Lam Research Corporation
    Inventor: Sebastien Dine
  • Patent number: 7994724
    Abstract: An inductive plasma applicator comprises a ferromagnetic inductively coupled source and an electrode with a hole pattern centered with respect to the plasma source. Such plasma applicator provides an efficient energy transfer to the plasma. The plasma applicator is preferably manufactured using a technology for producing electrical circuits. The electrode and a coil of the ferromagnetic inductively coupled plasma source are metal track portions formed on an insulating substrate. For example, the plasma applicator is manufactured using printed circuit board technology.
    Type: Grant
    Filed: March 27, 2009
    Date of Patent: August 9, 2011
    Assignees: Ecole Polytechnique, Centre National de la Recherche Scientifique-CNRS
    Inventor: Sébastien Dine
  • Publication number: 20100279028
    Abstract: A method for confining plasma within a plasma processing chamber while processing a substrate is provided. The method includes igniting the plasma within a plasma generating area, wherein the plasma generating area is surrounded by a set of confinement rings. The method also includes providing a chamber wall outside of the set of confinement rings. The method further includes providing a dielectric liner electrode arrangement positioned between the chamber wall and the set of confinement rings, wherein the dielectric liner electrode arrangement having an electrode encapsulated within a dielectric liner, the dielectric liner electrode arrangement being coupled with the chamber wall to create a modified chamber wall. The method yet also includes providing a parallel LC circuit arrangement, the parallel LC circuit arrangement being coupled between the dielectric liner electrode arrangement and the chamber wall.
    Type: Application
    Filed: July 19, 2010
    Publication date: November 4, 2010
    Inventor: Sebastien Dine
  • Publication number: 20100244699
    Abstract: An inductive plasma applicator comprises a ferromagnetic inductively coupled source and an electrode with a hole pattern centred with respect to the plasma source. Such plasma applicator provides an efficient energy transfer to the plasma. The plasma applicator is preferably manufactured using a technology for producing electrical circuits. The electrode and a coil of the ferromagnetic inductively coupled plasma source are metal track portions formed on an insulating substrate. For example, the plasma applicator is manufactured using printed circuit board technology.
    Type: Application
    Filed: March 27, 2009
    Publication date: September 30, 2010
    Applicants: Centre National De La Recherche Scientifique - CNRS -, Ecole Polytechnique
    Inventor: Sebastien Dine
  • Patent number: 7758718
    Abstract: A method for processing a substrate in a plasma processing chamber having a chamber wall is provided. The method includes providing an electrode arrangement having a cylindrical electrode encapsulated within a dielectric liner, which is coupled with the chamber wall. The method also includes providing an inductive circuit arrangement, which is coupled between the cylindrical electrode and the chamber wall. The method further includes generating a plasma within the plasma processing chamber to process the substrate while the electrode arrangement is disposed within the plasma processing chamber.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: July 20, 2010
    Assignee: Lam Research Corporation
    Inventor: Sebastien Dine
  • Patent number: 7615985
    Abstract: A probe for measuring electrical characteristics of an excitation current of a plasma is provided. The probe is mounted on a conductive line that includes an inner conductor and an outer conductor. The probe includes a current sensor and a voltage sensor. The current sensor includes a groove formed in the ground of one of the conductors in order to form a detour for the current flowing through the conductor, and a point for measuring electric voltage between a ground connected to the conductor and a point of the groove. The current sensor thus is able to measure a voltage proportional to the first time derivative of intensity (Iplasma) of the excitation current. The voltage sensor is a shunt sensor capable of measuring a voltage proportional to the first time derivative of the voltage (Vplasma) of the excitation current. A plasma reactor including a probe of the aforementioned type is also provided.
    Type: Grant
    Filed: September 15, 2005
    Date of Patent: November 10, 2009
    Assignees: Ecole Polytechnique, Centre National de la Recherche Scientifique (CNRS)
    Inventors: Sébastien Dine, Jacques Jolly, Jean Bernard Pierre Larour
  • Publication number: 20070252580
    Abstract: A probe for measuring electrical characteristics of an excitation current of a plasma is provided. The probe is mounted on a conductive line that includes an inner conductor and an outer conductor. The probe includes a current sensor and a voltage sensor. The current sensor includes a grove formed in the ground of one of the conductors in order to form a detour for the current flowing through the conductor, and a point for measuring electric voltage between a ground connected to the conductor and a point of the groove. The current sensor thus is able to measure a voltage proportional to the first time derivative of intensity (Iplasma) of the excitation current. The voltage sensor is a shunt sensor capable of measuring a voltage proportional to the first time derivative of the voltage (Vplasma) of the excitation current. A plasma reactor including a probe of the aforementioned type is also provided.
    Type: Application
    Filed: September 15, 2005
    Publication date: November 1, 2007
    Applicant: Ecole Polytechnique
    Inventors: Sebastien Dine, Jacques Jolly, Jean Larour