Patents by Inventor Sebastien FREGONESE

Sebastien FREGONESE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230387208
    Abstract: A lateral bipolar transistor includes an emitter region doped with a first conductivity type, having a first width and a first average doping concentration; a collector region doped with the first conductivity type, having a second width greater than the first width of the emitter region and a second average doping concentration lower than the first average doping concentration ; and a base region positioned between the emitter and collector regions. The emitter, collector and base regions are arranged in a silicon layer on an insulator layer on a substrate. A substrate region that is deprived of the silicon and insulator layers is positioned on a side of the collector region. A bias circuit is coupled, and configured to deliver, to the substrate region a bias voltage. This bias voltage is controlled to modulate an electrostatic doping of the collector region.
    Type: Application
    Filed: May 16, 2023
    Publication date: November 30, 2023
    Applicant: STMicroelectronics (Crolles 2) SAS
    Inventors: Pascal CHEVALIER, Sebastien FREGONESE, Thomas ZIMMER