Patents by Inventor Sebastien Haendler

Sebastien Haendler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS TRANSISTOR ON SOI STRUCTURE
    Publication number: 20230290786
    Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.
    Type: Application
    Filed: March 7, 2023
    Publication date: September 14, 2023
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA
    Inventors: Sebastien CREMER, Frederic MONSIEUR, Alain FLEURY, Sebastien HAENDLER
  • FDSOI-TYPE FIELD-EFFECT TRANSISTORS
    Publication number: 20180097014
    Abstract: An electronic chip includes FDSOI-type field-effect transistors. The transistor each have a channel region that is doped at an average level in a range from 1016 to 5*1017 atoms/cm3 with a conductivity type opposite to that of a conductivity type for the dopant in the drain and source regions.
    Type: Application
    Filed: October 2, 2017
    Publication date: April 5, 2018
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics SA, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Vincent Barral, Nicolas Planes, Antoine Cros, Sebastien Haendler, Thierry Poiroux, Olivier Weber, Patrick Scheer