Abstract: The invention provides a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first trimming step carried out over a first depth that includes at least the thickness of the first wafer and over a first width determined from the edge of the first wafer. A second trimming step is then carried out over a second depth that includes at least the thickness of the first wafer and over a second width that is less than the first width.

Abstract: The invention relates to a process for fabricating a multilayer structure comprising: bonding a first wafer onto a second wafer, at least the first wafer having a chamfered edge; and thinning the first wafer so as to form in a transferred layer, the thinning comprising a grinding step and a chemical etching step. After the grinding step and before the chemical etching step, a trimming step of the edge of the first wafer is carried out using a grinding wheel, the working surface of which comprises grit particles having an average size of less than or equal to 800-mesh or greater than or equal to 18 microns, the trimming step being carried out to a defined depth in the first wafer so as to leave a thickness of the first wafer of less than or equal to 35 ?m in the trimmed region.

Abstract: The invention relates to a process for fabricating a multilayer structure that includes bonding a first wafer onto a second wafer, where the first wafer may have a chamfered edge and the bonding interface has an adhesion energy of less than or equal to 1 J/m2, and thinning the first wafer so as to form a transferred layer, where before thinning the first wafer, a step of trimming the edge of the first wafer is carried out using a grinding wheel having a working surface which comprises grit particles with an average size of greater than or equal to 800 mesh or less than or equal to 18 microns, and wherein the trimming step is carried out by lowering the grinding wheel at a rate of descent of greater than or equal to 5 microns per second, such that the descent of the grinding wheel into the first wafer continues to a distance from the bonding interface that is less than or equal to 30 ?m.

Abstract: The invention relates to a process for fabricating a multilayer structure (130) comprising: bonding a first wafer onto a second wafer, at least the first wafer having a chamfered edge; and thinning the first wafer so as to form in a transferred layer, the thinning comprising a grinding step and a chemical etching step. After the grinding step and before the chemical etching step, a trimming step of the edge of the first wafer is carried out using a grinding wheel, the working surface of which comprises grit particles having an average size of less than or equal to 800 mesh or greater than or equal to 18 microns, the trimming step being carried out to a defined depth in the first wafer so as to leave a thickness of the first wafer of less than or equal to 35 ?m in the trimmed region.

Abstract: The invention relates to a method of trimming a structure that includes a first wafer bonded to a second wafer, with the first wafer having a chamfered edge. The method includes a first step of trimming the edge of the first wafer by mechanical machining over a predetermined depth in the first wafer. This first trimming step is followed by a second step of non-mechanical trimming over at least the remaining thickness of the first wafer.