Abstract: An integrated circuit and method includes retention voltage generation circuitry which receives a supply voltage from a supply voltage node and provides a retention voltage. Functional circuitry is connected between the retention voltage node and a reference voltage node and is held in a data retention state when at least a minimum voltage is provided between the retention voltage node and the reference voltage node. Each of the circuits includes at least one p-type threshold device and at least one n-type threshold device, both having a characteristic threshold voltage. The p-type and n-type threshold devices are connected in parallel between the supply voltage node and the retention voltage node. A variation in the characteristic threshold voltage of either of the at least one p-type or the at least one n-type device maintains at least the minimum voltage between the retention voltage node and the reference voltage node.

Abstract: A timing circuit and corresponding method are provided to generate an output timing signal in dependence on an input timing signal. The timing circuit comprises a plurality of circuit components, each circuit component configured to receive an input dependent on the input timing signal and to generate an output in dependence on that input. Each circuit component performs switching operations by switching its output level in response to a transition of its input level. Each circuit component exhibits a delay in switching its output level, the delay comprising a first delay associated with a first switching of its output level and a second delay associated with a second switching of its output level. The first switching is in an opposite direction to the second switching and the first delay and the second delay exhibit a change in magnitude as each circuit component repeatedly performs its switching operations.

Abstract: A timing circuit and corresponding method are provided to generate an output timing signal in dependence on an input timing signal. The timing circuit comprises a plurality of circuit components, each circuit component configured to receive an input dependent on the input timing signal and to generate an output in dependence on that input. Each circuit component performs switching operations by switching its output level in response to a transition of its input level. Each circuit component exhibits a delay in switching its output level, the delay comprising a first delay associated with a first switching of its output level and a second delay associated with a second switching of its output level. The first switching is in an opposite direction to the second switching and the first delay and the second delay exhibit a change in magnitude as each circuit component repeatedly performs its switching operations.

Abstract: A memory device and method of operation are provided. The memory device comprises a plurality of memory cells arranged in at least one column, during a write operation a data value being written to an addressed memory cell within a selected column from said at least one column. A supply voltage line is associated with each column, the supply voltage line being connectable to a first voltage source to provide a supply voltage at a first voltage level to the associated column. Threshold circuitry is connected to a second voltage source having a second voltage level, the threshold circuitry having a threshold voltage. Control circuitry is used during the write operation to disconnect the supply voltage line for the selected column from the first voltage source, and to connect the threshold circuitry to the supply voltage line for the selected column.

Abstract: A memory device and method of operation are provided. The memory device comprises a plurality of memory cells arranged in at least one column, during a write operation a data value being written to an addressed memory cell within a selected column from said at least one column. A supply voltage line is associated with each column, the supply voltage line being connectable to a first voltage source to provide a supply voltage at a first voltage level to the associated column. Threshold circuitry is connected to a second voltage source having a second voltage level, the threshold circuitry having a threshold voltage. Control circuitry is used during the write operation to disconnect the supply voltage line for the selected column from the first voltage source, and to connect the threshold circuitry to the supply voltage line for the selected column.

Abstract: Sensing circuitry and a method of operating such sensing circuitry are provided. The sensing circuitry has voltage change detection circuitry for detecting a change in voltage on at least one input line and for producing at least one output signal indicative of that change during a sensing stage of operation. The voltage change detection circuitry comprises at least one latch transistor having a body region insulated from a substrate. Further, body biasing circuitry is provided which, prior to the sensing stage of operation, causes a voltage to be applied to the body region that is derived from the voltage on one of said at least one input lines. Then, during the sensing stage of operation, the body biasing circuitry causes the voltage of the body region to float. Such an arrangement enables removal of the history effect that can sometime affect such latch transistors, whilst alleviating power consumption and noise issues that can occur in certain known sensing circuits.