Patents by Inventor Sebastien Pauliac

Sebastien Pauliac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Nanoimprint lithography
    Patent number: 9523910
    Abstract: The present invention relates to a nanoimprint lithography method.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 20, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sebastien Pauliac, Stefan Landis
  • Lithography process
    Patent number: 9429839
    Abstract: A lithography method including: a preparation, during which a resist layer is deposited on a substrate, and a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, and during the preliminary lithography, a formation of at least one positioning mark forming a relief in the resist layer. The method further includes at least one subsequent lithography applied to the resist layer and including: a preliminary positioning including positioning a lithography mechanism as a function of the at least one positioning mark, and at least one formation of additional patterns in the resist layer using the lithography mechanism positioned as a function of the at least one positioning mark.
    Type: Grant
    Filed: April 12, 2012
    Date of Patent: August 30, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Sebastien Pauliac
  • Nanometric imprint lithography method
    Patent number: 9305783
    Abstract: A nanoimprint lithography method, including: pressing a mold in a photosensitive resin to form at least one imprint pattern defined by a stamped area and an adjacent area, the adjacent area being less stamped or not stamped at all, and being thicker than the stamped area; and exposure to a certain amount of sunlight. Respective thicknesses of the two areas are defined such that the two areas absorb a different amount of the sunlight and the amount of sunlight provided by the exposure is predetermined so as to be great enough to activate the resin in whichever of the two areas has the greater absorption, and so as not to be great enough to activate the other of the two areas.
    Type: Grant
    Filed: December 21, 2011
    Date of Patent: April 5, 2016
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventor: Sebastien Pauliac
  • LITHOGRAPHY PROCESS
    Publication number: 20140109785
    Abstract: A lithography method including: a preparation, during which a resist layer is deposited on a substrate, and a preliminary lithography carried out to define at least one preliminary pattern in the resist layer, and during the preliminary lithography, a formation of at least one positioning mark forming a relief in the resist layer. The method further includes at least one subsequent lithography applied to the resist layer and including: a preliminary positioning including positioning a lithography mechanism as a function of the at least one positioning mark, and at least one formation of additional patterns in the resist layer using the lithography mechanism positioned as a function of the at least one positioning mark.
    Type: Application
    Filed: April 12, 2012
    Publication date: April 24, 2014
    Applicant: Commissariat A L'Energie Atomique Et Aux Ene Alt
    Inventor: Sebastien Pauliac
  • NANOMETRIC IMPRINT LITHOGRAPHY METHOD
    Publication number: 20140004313
    Abstract: A nanoimprint lithography method, including: pressing a mold in a photosensitive resin to form at least one imprint pattern defined by a stamped area and an adjacent area, the adjacent area being less stamped or not stamped at all, and being thicker than the stamped area; and exposure to a certain amount of sunlight. Respective thicknesses of the two areas are defined such that the two areas absorb a different amount of the sunlight and the amount of sunlight provided by the exposure is predetermined so as to be great enough to activate the resin in whichever of the two areas has the greater absorption, and so as not to be great enough to activate the other of the two areas.
    Type: Application
    Filed: December 21, 2011
    Publication date: January 2, 2014
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventor: Sebastien Pauliac
  • NANOIMPRINT LITHOGRAPHY
    Publication number: 20130187312
    Abstract: The present invention relates to a nanoimprint lithography method.
    Type: Application
    Filed: May 26, 2011
    Publication date: July 25, 2013
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Sebastien Pauliac, Stefan Landis