Abstract: In a chemical-mechanical polishing machine, polishing product comprising abrasive particles suspended in a reactive liquid is fed to the machine for use in a polishing operation that is divided into at least a first step and a second step. During the second step, the polishing machine is fed via a filter with a product containing fewer large particles than the product feeding the polishing machine during the first step. The feed device may be formed of two parallel lines which are provided with valves. At least one of those lines is provided with the filter.

Abstract: A method for the treatment of copper surfaces on a semiconductor wafer for the removal of carbonaceous residues, these being obtained during a chemical-mechanical polishing operation, includes a water rinsing of the wafer followed by a chemical rinsing of the wafer using a solution containing a corrosion inhibitor and an organic acid.