Abstract: In one aspect of the invention, a method for the improved operation of an electronic device manufacturing system is provided. The method includes providing information to an interface coupled to an electronic device manufacturing system having parameters, processing the information to predict a first parameter, and providing an instruction related to at least a second parameter of the electronic device manufacturing system wherein the instruction is based on the predicted first parameter. Numerous other aspects are provided.

Abstract: A thermal reactor for use during the abatement of a semiconductor manufacturing process is provided, including a thermal reaction unit having: an interior porous wall that defines a central chamber, the interior porous wall formed from a plurality of stacked porous sections; at least one gas inlet in fluid communication with the central chamber and adapted to introduce gaseous waste stream to the central chamber; a thermal mechanism positioned within the central chamber and adapted to decompose the gaseous waste stream within the central chamber, thereby forming reaction products; and a fluid delivery system adapted to provide a fluid to the central chamber through the interior porous wall at a sufficient force to reduce deposition of reaction products on an inner surface of the interior porous wall of the central chamber; wherein at least one of the porous sections has one or more of: a property that varies within the porous section; and a property that differs from a property of at least one other porous se

Abstract: In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. At least one of the stacked ceramic sections may be adapted to allow sensing of a characteristic of contents of the central chamber. In some embodiments, waste gas inlets to the thermal reaction unit may be angled to create a helical vortex within the thermal reaction unit. Other aspects are provided.

Abstract: Systems and methods are provided involving abatement of effluents. Aspects of the invention may include starting an abatement system at a high level setting; receiving an effluent having an undesirable material at the abatement system; abating the undesirable material using the abatement system at the high level setting; receiving information about the effluent; analyzing the information to determine an optimal setting; adjusting the high level setting to the optimal setting; and receiving more of the effluent having more of the undesirable material, which then may be attenuated. The optimal setting corresponds to a selected setting efficiency. Numerous other aspects are provided.

Abstract: In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.

Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.

Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.

Abstract: In certain aspects, a system is provided for abating perfluorocarbons (PFCs) from a gaseous waste stream that includes (1) a wet scrubber adapted to scrub a gaseous waste stream and having an outlet adapted to discharge a scrubbed gaseous waste stream; and (2) a controlled decomposition oxidation (CDO) system. The CDO system includes a CDO thermal reaction chamber that includes (a) an inlet coupled to the outlet of the wet scrubber; (b) a catalyst bed adapted to abate PFCs within the CDO thermal reaction chamber; and (c) an outlet. Numerous other aspects are provided.

Abstract: In some aspects, an apparatus is provided for abating perfluorocarbons (PFCs) in a controlled decomposition oxidation (CDO) thermal reaction chamber. The apparatus includes (1) a cartridge insertable into the thermal reaction chamber having gas-permeable first and second ends and including a catalyst material; and (2) thermally-conductive fixtures positioned within the cartridge. Numerous other aspects are provided.

Abstract: In at least one aspect, a controlled decomposition oxidation (CDO) system is provided for abating perfluorocarbons (PFCs) that includes (1) an upstream portion including a first conduit adapted to convey a gaseous waste stream; (2) a thermal reaction chamber having an inlet coupled to the first conduit, a catalyst bed adapted to abate PFCs, and an outlet; and (3) a downstream portion including a second conduit having a first end coupled to the outlet of the thermal reaction chamber and having a portion, downstream from the first end, positioned proximate to the first conduit. The second conduit is adapted to convey a gaseous waste stream heated within the thermal reaction chamber to enable a transfer of heat energy from the second conduit to the first conduit so as to pre-heat the gaseous waste stream in the first conduit. Numerous other aspects are provided.

Abstract: In one aspect, an apparatus is provided that includes (1) an interface adapted to analyze information about an electronic device manufacturing system that produces an effluent having an undesirable material, and provide information about the effluent, and (2) an abatement system adapted to receive information about the effluent, receive the effluent, and attenuate the undesirable material. Numerous other aspects are provided.

Abstract: In one aspect, improved methods and apparatus for pressure control in an electronic device manufacturing system are provided. The method includes acquiring information related to a current state of the electronic device manufacturing system, determining a desired value of a first parameter of the electronic device manufacturing system based on the acquired information and adjusting at least one parameter of a pump to obtain the desired value of the first parameter of the electronic device manufacturing system.

Abstract: In one aspect of the invention, a method for the improved operation of an electronic device manufacturing system is provided. The method includes providing information to an interface coupled to an electronic device manufacturing system having parameters, processing the information to predict a first parameter, and providing an instruction related to at least a second parameter of the electronic device manufacturing system wherein the instruction is based on the predicted first parameter. Numerous other aspects are provided.

Abstract: In certain embodiments, methods, systems, and apparatus are provided for use in removing pollutants from a gas stream. The invention includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. The porous rings include perforations adapted to allow fluid to be flowed into the thermal reaction unit. By flowing fluid through the porous rings, deposition of waste effluent and/or by-products on the interior of the thermal reaction unit is prevented. Numerous other aspects are provided.

Abstract: In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. At least one of the stacked ceramic sections may be adapted to allow sensing of a characteristic of contents of the central chamber. In some embodiments, waste gas inlets to the thermal reaction unit may be angled to create a helical vortex within the thermal reaction unit. Other aspects are provided.

Abstract: In certain embodiments, an apparatus is provided for use in removing pollutants from a gas stream. The apparatus may include one or more thermal reaction units formed from a plurality of stacked porous ceramic rings. The thermal reaction units may be selectively coupled to one or more process tools. In some embodiments a manifold may be used to direct waste effluent toward online primary thermal reaction units and away from back-up thermal reaction units. If a primary thermal reaction unit goes off-line, the manifold may redirect waste effluent toward one or more of the back-up thermal reaction units. Numerous other aspects are provided.

Abstract: In certain embodiments, methods, systems, and apparatus are provided for use in removing pollutants from a gas stream. The invention includes a thermal reaction unit formed from a plurality of stacked porous ceramic rings. A first of the porous ceramic rings has a first coefficient of thermal expansion (CTE) and a second of the porous ceramic rings has a second CTE. Numerous other aspects are provided.

Abstract: In a first aspect, a first abatement apparatus is provided. The first abatement apparatus includes (1) an oxidation unit adapted to receive an effluent stream from a semiconductor device manufacturing chamber; (2) a first water scrubber unit adapted to receive the effluent stream from the oxidation unit; and (3) a catalysis unit adapted to receive the effluent stream from the first water scrubber unit. Numerous other aspects are provided.

Abstract: A substrate processing apparatus has a process chamber and an effluent treatment reactor. The process chamber has a substrate support, a process gas supply, a gas energizer, and an exhaust conduit. The effluent treatment reactor has an effluent inlet to receive effluent from the exhaust conduit of the process chamber, a plasma cell having one or more electrodes electrically connected to a voltage source adapted to electrically bias the electrodes to couple energy to effluent received in the plasma cell, a scrubbing cell coaxially exterior to the plasma cell, the scrubbing cell having a scrubbing fluid inlet to introduce scrubbing fluid into effluent in the scrubbing cell and a scrubbing fluid outlet, and an effluent outlet to release the treated effluent.

Abstract: A substrate processing system that includes a deposition chamber having a reaction zone, a substrate holder that positions a substrate in the reaction zone, a gas distribution system that includes a gas inlet manifold for supplying one or more process gases to said reaction zone, a plasma power source for forming a plasma from a process gas introduced into the reaction zone of the deposition chamber and an impedance monitor that is electrically coupled to the deposition chamber to measure an impedance level of the plasma. In a preferred embodiment, the substrate holder is a first electrode and the gas inlet manifold is a second electrode and RF power is supplied by the plasma power source to either the first or second electrodes to form the plasma.