Abstract: A plating device includes a plating cell that includes a plating tank and a housing surrounding the plating tank, wherein the plating tank is configured to contain a volume of electrolyte, and wherein a wafer can be immersed within the electrolyte. An electrolyte chamber is below the plating cell and is configured to accommodate discharged electrolyte from the plating cell. A connection part is in fluid communication with the plating cell and the electrolyte chamber so that the electrolyte discharged from the plating cell flows to the electrolyte chamber. A resupply part is configured to resupply the plating tank with electrolyte from the electrolyte chamber. The connection part includes a first pipe through which the electrolyte flows at a first flow rate and a second pipe downstream of the first pipe and through which the electrolyte flows at a second flow rate lower than the first flow rate.

Abstract: A gas mixer may include a first gas channel, a first distribution channel, a second gas channel and a plurality of first connection channels. The first gas channel may be configured to supply a first gas into a reaction chamber. The first distribution channel may surround the first gas channel and is configured to uniformly distribute a second gas within the first distribution channel. The second gas channel may be configured to supply the second gas into the first distribution channel. The plurality of the first connection channels may be connected between the first distribution channel and the first gas channel. Thus, the second gas may be uniformly distributed in the cylindrical first distribution channel. The second gas may then be supplied to the first gas channel through the first connection channels. The second gas may be mixed with the first gas to form a mixed gas. As a result, the mixed gas may be uniformly distributed in the reaction chamber.

Abstract: A gas mixing device may include a main conduit and a gas transferring device connected to the main conduit. The gas transferring device may include a distribution device surrounding the main conduit, a supplying conduit connected to the distribution device and defining a supplying path, and a plurality of connection conduits connecting the first distribution device to the main conduit. The distribution device may include inner and outer cylinders, which are sequentially provided to surround the main conduit and are sequentially spaced apart from the main conduit in a radial direction. A distribution space may be defined between the inner and outer cylinders, and the supplying conduit may be coupled to the outer cylinder, such that the supplying path is connected to the distribution space. The connection conduits may be spaced apart from each other in a circumferential direction.

Abstract: A source gas nozzle including: an upstream pipe; a downstream pipe; and a U-turn pipe connecting the upstream pipe and the downstream pipe, wherein a plurality of first gas discharge holes are disposed in a longitudinal direction along at least one of the upstream pipe or the downstream pipe, and a gas non-discharge hole region and an asymmetric gas discharge hole region comprising a plurality of second gas discharge holes are disposed in opposite ones of the upstream pipe and the downstream pipe, and wherein the gas non-discharge hole region and the asymmetric gas discharge hole region are adjacent.

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Abstract: Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.

Abstract: A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

Abstract: Provided a semiconductor chip bonding apparatus including a body, a heater disposed on a lower surface of the body, a collet disposed on a lower surface of the heater, and a head disposed on a lower surface of the collet, the head has a rectangular plate shape, a lower surface and side surfaces of the head are exposed, an upper surface of the head is in contact with the lower surface of the collet, an area of the upper surface of the head is smaller than an area of the lower surface of the collet, the head includes a central section including a recess, and an outer surface constituting a part of the side surfaces of the head, and a peripheral section connected to the recess and disposed on each corners of the head, and a thermal conductivity of the peripheral section is different from that of the central section.