Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 110% of an intra-grain average film thickness.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: A thin film semiconductor device which includes an insulating substrate, a semiconductor polycrystal thin film formed over the substrate and a transistor with the thin film as a channel. The polycrystal includes a plurality of crystal grains, with grain boundaries between the crystal grains being recessed. The grain boundaries with the recessed surfaces are the most predominant of all grain boundaries within the channel. With this structure, the polycrystal can be a low temperature polycrystal that can be formed at a temperature of 150° C. or less, thereby achieving a low-cost device with high carrier mobility.

Abstract: In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.

Abstract: In a thin film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and a growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high-mobility semiconductor devices and an image display device using these semiconductor devices are realized.

Abstract: In a thin film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and a growth speed of crystals in a Sin thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high-mobility semiconductor devices and an image display device using these semiconductor devices are realized.