Abstract: The present invention relates to novel mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, a novel crystalline form thereof, and a process for preparing the same. More specifically, the present invention relates to mesylate salt of N-(5-(4-(4-((dimethylamino)methyl)-3-phenyl-1H-pyrazol-1-yl)pyrimidine-2-ylamino)-4-methoxy-2-morpholinophenyl)acrylamide, which is excellent in stability, solubility, and bioavailability when it is administered not only alone but also in combination with other drugs and which has a high purity, a crystalline form thereof, and a process for preparing the same.

Abstract: A display device according to an embodiment includes a display portion, a color converting portion, and a sealant for bonding the display portion and the color converting portion. The color converting portion includes a substrate, a bank disposed on the substrate and including an opening, a color converting layer disposed in the opening of the bank, and a pattern disposed between the bank and the sealant. A thickness of the pattern is reduced toward an outside of the color converting portion.

Abstract: A display panel includes a first substrate including a first base substrate, a second substrate and a filling pattern. The first base substrate includes a display area including a plurality of pixel areas for image display and a non-display area around the display area, and an align key pattern including an opaque material in a part of the non-display area. The second substrate includes a second base substrate overlapping the first base substrate and including a transparent material, a light blocking structure in the non-display area, and a hole overlapping the align key pattern and penetrating the light blocking structure. The filling pattern is configured to fill the hole.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit a scan signal; a data line on the substrate, extending in a second direction crossing the first direction, and configured to transmit a data voltage; a common voltage line in the same layer as the data line and configured to transmit a common voltage; a first electrode on the data line and an assistance member on the common voltage line, the first electrode and the assistance member being separated from each other in the first direction or the second direction; a second electrode on the first electrode and the assistance member; and an organic emission layer between the first electrode and the second electrode. The assistance member is separated from the data line in the first direction.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit a scan signal; a data line on the substrate, extending in a second direction crossing the first direction, and configured to transmit a data voltage; a common voltage line in the same layer as the data line and configured to transmit a common voltage; a first electrode on the data line and an assistance member on the common voltage line, the first electrode and the assistance member being separated from each other in the first direction or the second direction; a second electrode on the first electrode and the assistance member; and an organic emission layer between the first electrode and the second electrode. The assistance member is separated from the data line in the first direction.

Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit a scan signal; a data line on the substrate, extending in a second direction crossing the first direction, and configured to transmit a data voltage; a common voltage line in the same layer as the data line and configured to transmit a common voltage; a first electrode on the data line and an assistance member on the common voltage line, the first electrode and the assistance member being separated from each other in the first direction or the second direction; a second electrode on the first electrode and the assistance member; and an organic emission layer between the first electrode and the second electrode. The assistance member is separated from the data line in the first direction.

Abstract: An electronic device may include a semiconductor memory. The semiconductor memory may include a global line pair including a global bit line and a global source line; a plurality of cell matrices coupled between the global bit line and the global source line, each cell matrix including a plurality of local line pairs and a plurality of storage cells that are coupled to the plurality of local line pairs, wherein each storage cell is operable to store data and is coupled between local lines of a corresponding local line pair; and a plurality of isolation switch pairs that couple the plurality of cell matrices to the global bit line and the global source line of the global line pair, one isolation switch pair per cell matrix.

Abstract: An electronic device may include a semiconductor memory. The semiconductor memory may include a global line pair including a global bit line and a global source line; a plurality of cell matrices coupled between the global bit line and the global source line, each cell matrix including a plurality of local line pairs and a plurality of storage cells that are coupled to the plurality of local line pairs, wherein each storage cell is operable to store data and is coupled between local lines of a corresponding local line pair; and a plurality of isolation switch pairs that couple the plurality of cell matrices to the global bit line and the global source line of the global line pair, one isolation switch pair per cell matrix.

Abstract: Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.

Abstract: An organic light emitting diode (OLED) display includes: a substrate; a scan line on the substrate, extending in a first direction, and configured to transmit a scan signal; a data line on the substrate, extending in a second direction crossing the first direction, and configured to transmit a data voltage; a common voltage line in the same layer as the data line and configured to transmit a common voltage; a first electrode on the data line and an assistance member on the common voltage line, the first electrode and the assistance member being separated from each other in the first direction or the second direction; a second electrode on the first electrode and the assistance member; and an organic emission layer between the first electrode and the second electrode. The assistance member is separated from the data line in the first direction.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: A semiconductor device includes a resistance variable element including a free magnetic layer, a tunnel barrier layer and a pinned magnetic layer; and a magnetic correction layer disposed over the resistance variable element to be separated from the resistance variable element, and having a magnetization direction which is opposite to a magnetization direction of the pinned magnetic layer.

Abstract: Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.

Abstract: Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.

Abstract: Devices and methods based on disclosed technology include, among others, an electronic device capable of improving a signal transfer characteristic and a method for fabricating the same. Specifically, an electronic device in one implementation includes a plurality of buried gates formed in a substrate, open parts formed in the substrate on both sides of the buried gate, isolation layers each formed between a sidewall of the open part and a sidewall of the buried gate, source/drain regions formed in the substrate under the respective open parts, and contact plugs buried in the respective open parts.