Abstract: A microelectronic device package includes a stack of semiconductor dies positioned over a substrate. The microelectronic device package further includes an interposer structure coupled to the stack of semiconductor dies. The microelectronic device package further includes an electronic component directly coupled to the interposer structure and electrically coupled to the substrate through an electrical connection between the interposer structure and the substrate.

Abstract: A microelectronic device package includes a microelectronic device coupled to a substrate. The microelectronic device package further includes a stack of semiconductor dies positioned over the microelectronic device. The microelectronic device package also includes an interposer positioned between the microelectronic device and the stack of semiconductor dies. The interposer includes a conductive structure electrically connecting the microelectronic device and a ground circuit of the substrate. The interposer further includes an insulative structure positioned between the conductive structure and the stack of semiconductor dies.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a circuit substrate comprising a first substrate surface, a second substrate surface arranged opposite to the first substrate surface, and a substrate edge that extends from the first substrate surface to the second substrate surface; a series of holes arranged along the substrate edge of the circuit substrate, wherein each hole of the series of holes extends at least partially from the first substrate surface toward the second substrate surface; at least one die arranged on the first substrate surface; and a package casing disposed over the first substrate surface, wherein the package casing encapsulates the at least one die and the first substrate surface, and wherein the package casing fills each hole of the series of holes.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a substrate including multiple first electrical contacts and multiple bondable pillars. In some implementations, each bondable pillar, of the multiple bondable pillars, may be coupled to a corresponding first electrical contact, of the multiple first electrical contacts. The semiconductor device assembly may further include one or more dies coupled to the substrate and including multiple second electrical contacts. In some implementations, the semiconductor device assembly may include multiple wire bonds, with each wire bond, of the multiple wire bonds, bonding a second electrical contact, of the multiple second electrical contacts, to a bondable pillar, of the multiple bondable pillars.

Abstract: A variety of applications can include systems having packaged electronic devices. One or more of the packaged electronic devices can include a package substrate, having a first section and a second section with the second section elevated with respect to the first section, to support dies in the two sections. The first section can have a first top surface and a bottom surface with one or more layers of material between the first top surface and the bottom surface. The second section can include a second top surface and the bottom surface of the first section with the one or more layers of material of the first section extending horizontally from the first section. The second section can have one or more additional layers of material between the second top surface and the one or more layers of material of the first section extending horizontally from the first section.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a substrate and multiple first electrical contacts disposed on the substrate. The semiconductor device assembly may include a load switch coupled to the substrate and including a first outer surface facing the substrate and an opposing second outer surface facing away from the substrate. The load switch may include multiple second electrical contacts disposed on the second outer surface. The semiconductor device assembly may include multiple wire bonds electrically coupling the load switch to the substrate, wherein each wire bond electrically couples a corresponding first electrical contact, of the multiple first electrical contacts, to a corresponding second electrical contact, of the multiple second electrical contacts.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor package includes a substrate, a semiconductor die disposed on the substrate, and a passive electronic component disposed on the semiconductor die.

Abstract: A semiconductor device assembly includes a semiconductor die, a substrate carrying the semiconductor die, and a printed circuit board (PCB) coupled to the substrate. The PCB includes a primary conductive layer including a first surface of the substrate and a first solder mask layer coupled to the first surface. The substrate also includes a secondary conductive layer including a second surface of the substrate and a second solder mask layer coupled to the second surface. The substrate further includes an inner conductive layer positioned between the primary layer and the secondary layer, where the inner layer includes a bond pad positioned at the end of an opening that extends from the first solder mask layer through the primary layer to the bond pad of the inner layer. By attaching a solder ball to the bond pad of the inner layer, standoff height is reduced.

Abstract: A semiconductor device assembly including a substrate; a first split via including a first via land that is disposed on a surface of the substrate and that has a first footprint with a half-moon shape with a first radius of curvature, and a first via that passes through the substrate and that has a second radius of curvature, wherein the first via is disposed within the first footprint; and a second split via including a second via land that is disposed on the surface of the substrate and that has a second footprint with the half-moon shape with the first radius of curvature, and a second via that passes through the substrate and that has the second radius of curvature, wherein the second via is disposed within the second footprint, wherein the first and second via lands are disposed entirely within a circular region having the first radius of curvature.

Abstract: Stacked semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having at least a first layer and a second layer, an interconnect extending through the package substrate, a stack of dies carried by the package substrate, and one or more wirebonds electrically coupling the stack of dies to package substrate. Each of the layers of the package substrate can include a section of the interconnect with a frustoconical shape. Each of the sections can be directly coupled together. Further, the section in an uppermost layer of the package substrate is exposed at an upper surface of the package substrate. The wirebonds can be directly coupled to the exposed surface of the uppermost section.

Abstract: A semiconductor device assembly including a semiconductor device having a plurality of pillars disposed on a backside surface of the semiconductor device; and a substrate, including: a solder mask layer disposed on a front side surface of the substrate, a plurality of extended bond pads disposed on the frontside surface of the substrate and surrounded by the solder mask layer, the plurality of extended bond pads each having a top surface higher than a top surface of the solder mask layer, and wherein the semiconductor device is directly attached to the substrate by bonding each of the plurality of pillars of the semiconductor device to the top surface of a corresponding one of the plurality of extended bond pads with a solder connection.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly includes a first semiconductor die, a second semiconductor die in a stacked arrangement with the first semiconductor die, and a flexible interposer disposed between the first semiconductor die and the second semiconductor die. The flexible interposer may include a first flexible layer, a second flexible layer, and a conductive trace disposed between the first flexible layer and the second flexible layer. A spacer portion of the flexible interposer may space the first semiconductor die from the second semiconductor die. A connecting portion of the flexible interposer may extend from the spacer portion beyond edges of the first semiconductor die and the second semiconductor die.

Abstract: Methods, systems, and devices for wire bonding for stacked memory dies are described. A memory system may include a stack of memory dies. As the stack grows to include more and more memory dies, the length of the wires coupling the memory dies with the control circuit may increase. Bonding multiple wires using an adhesive may increase a gap between neighboring wires coupled with the same memory die or different memory dies. For example, bonding one wire to a neighboring wire may pull one or both of the bonded wires away from their original placement, increasing a gap between the bonded wires and one or more neighboring wires. Bonding the wires coupled with a lower memory die may increase a gap such that sagging wires coupled with an upper memory die may be positioned in the gap to avoid shorting with the lower wires.

Abstract: Implementations described herein relate to various semiconductor device assemblies. In some implementations, a semiconductor device assembly may include a substrate, a flip chip die electrically coupled to the substrate via a plurality of electrical connections, and a non-conductive film disposed between the flip chip die and the substrate. The non-conductive film may surround the plurality of electrical connections and mechanically couple the flip chip die to the substrate.

Abstract: Semiconductor die assemblies with molded semiconductor dies, and associated methods and systems are disclosed. In some embodiments, a semiconductor die assembly includes a package substrate and a controller die attached to the package substrate. The semiconductor die assembly comprises a mold structure including the controller die and having a surface facing away from the package substrate. The controller die may be completely encased within the mold structure. Further, one or more stacks of semiconductor dies (e.g., memory dies) are attached to the surface of the mold structure. Accordingly, the semiconductor die assembly does not include support structures for the stacks of semiconductor dies attached above the controller die.

Abstract: Packaged microelectronic devices and methods of manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a stand-off layer over a plurality of microelectronic dies on a semiconductor workpiece, and removing selected portions of the stand-off layer to form a plurality of stand-offs with the individual stand-offs positioned on a backside of a corresponding die. The method further includes cutting the semiconductor workpiece to singulate the dies, and attaching the stand-off on a first singulated die to a second die.

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.

Abstract: Packaged microelectronic devices and methods of manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a stand-off layer over a plurality of microelectronic dies on a semiconductor workpiece, and removing selected portions of the stand-off layer to form a plurality of stand-offs with the individual stand-offs positioned on a backside of a corresponding die. The method further includes cutting the semiconductor workpiece to singulate the dies, and attaching the stand-off on a first singulated die to a second die.

Abstract: Packaged microelectronic devices and methods of manufacturing packaged microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a stand-off layer over a plurality of microelectronic dies on a semiconductor workpiece, and removing selected portions of the stand-off layer to form a plurality of stand-offs with the individual stand-offs positioned on a backside of a corresponding die. The method further includes cutting the semiconductor workpiece to singulate the dies, and attaching the stand-off on a first singulated die to a second die.

Abstract: Stacked microelectronic devices and methods of manufacturing stacked microelectronic devices are disclosed herein. In one embodiment, a method of manufacturing a microelectronic device includes forming a plurality of electrically isolated, multi-tiered metal spacers on a front side of a first microelectronic die, and attaching a back-side surface of a second microelectronic die to individual metal spacers. In another embodiment, the method of manufacturing the microelectronic device may further include forming top-tier spacer elements on front-side wire bonds of the first die.