Patents by Inventor See jong Leem

See jong Leem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing light emitting diodes
    Patent number: 8709835
    Abstract: A method for manufacturing the LEDs is disclosed, whereby the light extraction efficiency of the device can be enhanced by forming patterns on a top surface of a substrate, a light emitting structure is formed on the top surface of the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on top surface of the substrate are formed on the surface of the light emitting structure.
    Type: Grant
    Filed: June 12, 2006
    Date of Patent: April 29, 2014
    Assignee: LG Electronics Inc.
    Inventor: See jong Leem
  • Light emitting diode
    Patent number: 8008646
    Abstract: A light emitting diode is disclosed, wherein the light extraction efficiency of a device can be enhanced by forming patterns on a substrate, a light emitting structure is formed on the substrate formed with the patterns, the substrate is removed from the light emitting structure, and patterns corresponding to those formed on the substrate are formed on the light emitting structure.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: August 30, 2011
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: See jong Leem
  • Method of manufacturing light emitting diodes
    Patent number: 7776637
    Abstract: A method of manufacturing a light emitting diode, wherein a laser lift-off (LLO) layer and an epi-layer are formed on a nitride semiconductor substrate, and the nitride semiconductor substrate is then separated through a laser lift-off process, thereby improving the characteristics of the epi-layer and enabling to fabricate a high-grade and high-efficiency light emitting diode. Further, the LLO layer thus prepared is removed using a laser beam so that the relatively expensive nitride semiconductor substrate can be re-used, thereby reducing manufacturing costs.
    Type: Grant
    Filed: May 25, 2006
    Date of Patent: August 17, 2010
    Assignees: LG Electronics Inc., LG Innotek Co., Ltd.
    Inventor: See jong Leem