Patents by Inventor Seekei Lee

Seekei Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11378885
    Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.
    Type: Grant
    Filed: March 13, 2018
    Date of Patent: July 5, 2022
    Assignee: Kioxia Corporation
    Inventors: Koji Asakawa, Naoko Kihara, Seekei Lee, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Patent number: 10877374
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: December 29, 2020
    Assignee: Toshiba Memory Corporation
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190086805
    Abstract: According to one embodiment, a pattern formation material includes a first monomer. The first monomer includes a first molecular chain, a first group, and a second group. The first molecular chain includes a first end and a second end. The first group has an ester bond to the first end. The second group has an ester bond to the second end. The first group is one of acrylic acid or methacrylic acid. The second group is one of acrylic acid or methacrylic acid. The first molecular chain includes a plurality of first elements bonded in a straight chain configuration. The first elements are one of carbon or oxygen. The number of the first elements is 6 or more. A film including the first monomer is caused to absorb a metal compound including a metallic element.
    Type: Application
    Filed: March 13, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji ASAKAWA, Naoko KIHARA, Seekei LEE, Norikatsu SASAO, Tomoaki SAWABE, Shinobu SUGIMURA
  • Publication number: 20190086803
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a film formation process, and a exposure process. The film formation process forms a pattern formation material film on a base body. The pattern formation material film includes a pattern formation material including a first portion and a second portion. The first portion includes at least one of acrylate or methacrylate. The second portion includes an alicyclic compound and a carbonyl group. The alicyclic compound has an ester bond to the at least one of the acrylate or the methacrylate. The carbonyl group is bonded to the alicyclic compound. The exposure process causes the pattern formation material film to expose to a metal compound including a metallic element.
    Type: Application
    Filed: March 8, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Koji Asakawa, Seekei Lee, Naoko Kihara, Norikatsu Sasao, Tomoaki Sawabe, Shinobu Sugimura
  • Publication number: 20190084829
    Abstract: According to one embodiment, a pattern formation method is disclosed. The method can include a preparation process, a first layer formation process, a block copolymer layer formation process, and a contact process. The preparation process prepares a pattern formation material including a polymer including a first chemical structure including carbon, hydrogen, and a first group. The first group includes one of a vinyl group, a hydroxy group, or a first element. The first layer formation process forms a first layer on a base body. The first layer includes the pattern formation material. The block copolymer layer formation process forms a block copolymer layer on the first layer. The block copolymer layer includes a first polymer and a second polymer. The block copolymer layer formation process includes forming first and second regions. The contact process causes the block copolymer layer to contact a metal compound including a metallic element.
    Type: Application
    Filed: March 9, 2018
    Publication date: March 21, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Norikatsu SASAO, Koji Asakawa, Seekei Lee, Naoko Kihara, Tomoaki Sawabe, Shinobu Sugimura