Abstract: A method of predicting sequence for a manufacturing process to assemble a product includes obtaining a target plan for the manufacturing process. The target plan defines a process segment to be performed during the manufacturing process. The method includes retrieving a plurality of surrogate process segments based on the target plan, determining, for each surrogate process segment from the plurality of surrogate process segments, a segment similarity value based on at least one of a textual similarity and a sequence similarity between the surrogate process segment and the process segment of the target plan, and generating a target process defining a process sequence for performing the manufacturing process based on the segment similarity values of the plurality of surrogate process segments and a sequence inference model.

Abstract: A method of predicting sequence for a manufacturing process to assemble a product based on a target plan for the manufacturing process includes retrieving, from a historical process database, a plurality of surrogate process segments based on the target plan, determining, for each surrogate process segment from the plurality of surrogate process segments, a segment similarity value based on a data analysis model, and generating a target process defining a process sequence for performing the manufacturing process based on the segment similarity values of the plurality of surrogate process segments and a sequence inference model that classifies the process segment of the target plan to sequences defined by the plurality of surrogate process segments. The target process includes data that defines a plurality of selected process steps and one or more workstations for the process segment of the target plan.

Abstract: An electrostatic discharge (ESD) circuit including a booster cell is disclosed. The ESD circuit may include first and second rails configured to provide power to the ESD circuit. The first rail may include two spaced apart conductors. The ESD circuit may further include an input/output (I/O) pad and a power/ground (P/G) pad. The P/G pad may include a power clamp electrically coupled between the first and second rails. The booster cell may be physically located between the I/O pad and the P/G pad. The booster cell may provide an electrical connection between the two spaced apart conductors.

Abstract: An electrostatic discharge (ESD) circuit including a booster cell is disclosed. The ESD circuit may include first and second rails configured to provide power to the ESD circuit. The first rail may include two spaced apart conductors. The ESD circuit may further include an input/output (I/O) pad and a power/ground (P/G) pad. The P/G pad may include a power clamp electrically coupled between the first and second rails. The booster cell may be physically located between the I/O pad and the P/G pad. The booster cell may provide an electrical connection between the two spaced apart conductors.

Abstract: The present disclosure relates to methods and systems for performing a cost-benefit analysis of a microtransit service, including a method utilizing both transportation simulation and experimental design in connection with the cost-benefit analysis.

Abstract: An improved synchronous SRAM capable of faster read-modify-write cycle time using separate input and output terminals. It describes the circuitry for performing a RMW operation in a memory module at high frequency in a nanometer technology. A byte write enable bus is incorporated into the device so as to provide the flexibility of modification and correction at selective columns, keeping rest of the columns unaltered. The termination of read operation and the triggering of write operation is done by the activation of same signal. Also described is the provision for tuning the circuitry for triggering write operation depending on the time taken by the controller to modify and revise the read-out data.

Abstract: An improved synchronous SRAM capable of faster read-modify-write cycle time using separate input and output terminals. It describes the circuitry for performing a RMW operation in a memory module at high frequency in a nanometer technology. A byte write enable bus is incorporated into the device so as to provide the flexibility of modification and correction at selective columns, keeping rest of the columns unaltered. The termination of read operation and the triggering of write operation is done by the activation of same signal. Also described is the provision for tuning the circuitry for triggering write operation depending on the time taken by the controller to modify and revise the read-out data.