Abstract: A depth-wise convolution acceleration device using an MAC array processor structure according to the present invention may include a data output unit, which receives a data of each row of the image from the data buffer and inputs the data into convolution operation blocks while shifting the data N?1 times according to the kernel size (N×N) and a weight output unit, which receives the kernel data from the kernel buffer and sequentially inputs a weight value constituting the kernel data to each of the row convolution operation blocks, and inputs the weight delaying by N clocks if the row increases as N rows.

Abstract: This invention is about a multi-project chip or MP-chip that includes multiple individual units that can be selectively driven by multiple orders, and one or more common units that can be driven by two or more of the orders, respectively. In particular, the MP-chip may be installed inside the MP-chip or may be manufactured as a body separate the MP-chip or installed inside the MP-chip.

Abstract: A system and method for measuring the position of a moving object based on AI, which provides location and distance information of a moving object to a user using artificial intelligence-based image analysis and distance measurement. Accordingly, the system for measuring the position of an AI-based moving object includes a first camera that captures a first object, a second camera installed around the location where the first object has moved and captures the first object and a second object associated with the first object, and a rangefinder for measuring a first distance between the first object and a distance measurement reference position and a second distance between the second object and a distance measurement reference position; and an object monitoring device that calculates a position value of the first object and a position value of the second object using the first and the second distances measured by the rangefinder.

Abstract: Provided is a touch system. The touch system comprises: a substrate; an optical sensor module comprising a light emitting unit and a light receiving unit disposed on the bottom of the substrate to be adjacent to each other; and sensing control circuit driving the light emitting unit and sensing whether or not a user's touch is made on the substrate on the basis of a sensing signal sensed through the light receiving unit.

Abstract: There is provided a driving circuit using an internal diode instead of a zener diode and a discharging method using the same capable of replacing a driving circuit including an external zener diode, thereby reducing costs. The driving circuit using a discharging method for driving an OLED (organic light emitting diode) panel, the driving circuit includes: a precharge channel which is constructed in a current mirror scheme and is turned off when discharging; a discharge channel which is connected to the to precharge channel in series and operates when discharging; and an internal diode which is connected to the discharge channel and controls a discharge voltage level. According to the present invention, a voltage level can be controlled not to be discharged to a ground level by using an internal diode circuit when discharging. Therefore, a driving circuit requiring low power can be implemented, and additional costs are not needed.

Abstract: There is provided a driving circuit in which a voltage level can reach a full Vcc level when precharging and a precharging method using the same although a parasitic capacitance of an organic light emitting diode (OLED) panel increases. A driving circuit of an OLED panel includes according to the present invention: a precharge channel which is applied with Vcc voltage and operates when precharging; a discharge channel which is connected to the precharge channel in series and is connected to ground (GND) and is turned off when precharging; and a time shift circuit which is connected to the precharge channel and controls a voltage level according to a time setting. According to the present invention, a precharge voltage level can reach a full Vcc level according to a time setting although a parasitic capacitance of an OLED panel increases. Therefore, a driving circuit can be simply and easily implemented.

Abstract: A semiconductor memory device includes a trench type SRAM(Static Random Access Memory) cell having a higher integration than a stack type SRAM. The SRAM cell memory device is provided with a trench formed in a semiconductor substrate and having four side walls therein, wherein a source and drain region of a drive transistor is formed in two of the four side walls, respectively, a pair of active layers respectively having a source and drain regions of a first load transistor is formed on the substrate adjacent to the side walls, and a gate electrode common to the load transistor is formed on a gate oxide film, whereby the gate electrode of the access transistor is vertically formed toward a direction vertical to the semiconductor substrate instead of being formed on the substrate for thereby decreasing an area to be occupied by transistor.

Abstract: A semiconductor memory device includes a trench type SRAM(Static Random Access Memory) cell having a higher integration than a stack type SRAM. The SRAM cell memory device is provided with a trench formed in a semiconductor substrate and having four side walls therein, wherein a source region and a drain region of each of first and second drive transistors are formed in two of the four side walls. A pair of active layers respectively having a source region and a drain region of a first load transistor and a second load transistor, respectively, are formed on the substrate adjacent to the side walls. A gate electrode common to the first drive transistor and the first load transistor is formed on a gate oxide film. A gate electrode of an access transistor is vertically formed in a direction vertical to the semiconductor substrate instead of being formed on the substrate for thereby decreasing an area to be occupied by the transistor.

Abstract: A semiconductor memory device includes a trench type SRAM(Static Random Access Memory) cell having a higher integration than a stack type SRAM. The SRAM cell memory device is provided with a trench formed in a semiconductor substrate and having four side walls therein, wherein a source and drain region of a drive transistor is formed in two of the four side walls, respectively, a pair of active layers respectively having a source and drain regions of a first load transistor is formed on the substrate adjacent to the side walls, and a gate electrode common to the load transistor is formed on a gate oxide film, whereby the gate electrode of the access transistor is vertically formed toward a direction vertical to the semiconductor substrate instead of being formed on the substrate for thereby decreasing an area to be occupied by transistor.

Abstract: A semiconductor device is disclosed including a first insulating film having a contact hole and being formed on a substrate. A first impurity region is formed in the active layer on the bottom of the contact hole, and a second impurity region is formed in the active layer on the first insulating film outside the contact hole. In addition, a semiconductor region is formed in the active layer on the sidewall of the contact hole, and a second insulating film is formed on the first impurity region in the contact hole. A gate electrode is formed on the second insulating film.

Abstract: A semiconductor device is disclosed including a first insulating film having a contact hole and being formed on a substrate. A first impurity region is formed in the active layer on the bottom of the contact hole, and a second impurity region is formed in the active layer on the first insulating film outside the contact hole. In addition, a semiconductor region is formed in the active layer on the sidewall of the contact hole, and a second insulating film is formed on the first impurity region in the contact hole. A gate electrode is formed on the second insulating film.