Abstract: An edge ring centering system for a plasma processing system includes a processing chamber including a substrate support and R edge ring lift pins, where R is an integer greater than or equal to 3. An edge ring includes P grooves located on a bottom surface thereof, where P is an integer greater than or equal to R. A robot arm includes an end effector. A controller is configured to cause the optical sensor to sense a first position of the edge ring on the end effector; cause the robot arm to deliver the edge ring to a first center location on the edge ring lift pins; retrieve the edge ring from the edge ring lift pins; and cause the optical sensor to sense a second position of the edge ring on the end effector.

Abstract: A method for processing one or more substrates in a plasma processing chamber is provided. A plurality of cycles is provided, wherein each cycle comprises providing a pre-coat process, processing at least one substrate within the plasma processing chamber, and cleaning the plasma processing chamber. The providing the pre-coat process comprises one or more cycles of depositing a silicon containing pre-coat layer and depositing a carbon containing pre-coat layer.

Abstract: An edge ring system for a substrate processing system includes a top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the top edge ring is smaller than a horizontal opening of a substrate port of the substrate processing system. A first edge ring is arranged below the top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the first edge ring is larger than the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than the inner diameter of the top edge ring.

Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.

Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.

Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Abstract: A wafer is provided into an entrance load lock chamber. A vacuum is created in the entrance load lock chamber. The wafer is transported to a processing tool. The wafer is processed in a process chamber to provide a processed wafer, wherein the processing forms halogen residue. A degas step is provided in the process chamber after processing the wafer. The processed wafer is transferred into a degas chamber. The processed wafer is treated in the degas chamber with UV light and a flow of gas comprising at least one of ozone, oxygen, or H2O. The flow of gas is stopped. The UV light is stopped. The processed wafer is removed from the degas chamber.

Abstract: The present invention includes compositions, devices and methods for filling structures of high aspect ratio elements for growth amplification and device fabrication. A method includes a method of filling a structure comprising the steps of providing one or more structures, each structure having a plurality of high aspect ratio elements, wherein the aspect ratio is at least 5; and coating the plurality of high aspect ratio elements with at least one solidifying material produced by a form of chemical vapor deposition thereby forming a structured-film. Compositions of the present invention are solid formed structures that are less fragile, do not require such delicate handling to avoid serious degradation, are more stable, last longer, do not deform, and exhibit little stress as well as improved properties that include mechanical, chemical, electrical, biologic, and optical.