Abstract: The disclosure relates to a process for preparing particulate materials having high electrochemical capacities that are suitable for use as anode active materials in rechargeable metal-ion batteries. In one aspect, the disclosure provides a process for preparing a particulate material comprising a plurality of composite particles. The process includes providing particulate porous carbon frameworks comprising micro pores and/or mesopores, wherein the porous carbon frameworks have a D50 particle diameter of at least 20 ?m; depositing an electroactive material selected from silicon and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using a chemical vapour infiltration process in a fluidised bed reactor, to provide intermediate particles; and comminuting the intermediate particles to provide said composite particles.

Abstract: The invention relates to a process for preparing silicon-containing composite particles in a fluidized bed. Porous conductive particles having a defined particle size and pore structure are combined with a particulate additive having defined particle size, density and BET surface area. The combined porous conductive particles and particulate additive are subjected to chemical vapour infiltration in a fluidised bed to cause deposition of silicon in the pores of the porous conductive particles.

Abstract: The invention provides methods for providing composite particles with a carbon coating and the resulting core-shell particulate material. The process comprises subjecting a plurality of precursor composite particles to a heat treatment in contact with a pyrolytic carbon precursor such that an outer shell of a pyrolytic conductive carbon material is formed on the precursor composite particles, wherein the heat treatment is carried out at a temperature of no more than 700° C.

Abstract: The disclosure relates to a process for preparing particulate materials having high electrochemical capacities that are suitable for use as anode active materials in rechargeable metal-ion batteries. In one aspect, the disclosure provides a process for preparing a particulate material comprising a plurality of composite particles. The process includes providing particulate porous carbon frameworks comprising micro pores and/or mesopores, wherein the porous carbon frameworks have a D50 particle diameter of at least 20 ?m; depositing an electroactive material selected from silicon and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using a chemical vapour infiltration process in a fluidised bed reactor, to provide intermediate particles; and comminuting the intermediate particles to provide said composite particles.

Abstract: The disclosure relates to a process for preparing particulate materials having high electrochemical capacities that are suitable for use as anode active materials in rechargeable metal-ion batteries. In one aspect, the disclosure provides a process for preparing a particulate material comprising a plurality of composite particles. The process includes providing particulate porous carbon frameworks comprising micropores and/or mesopores, wherein the porous carbon frameworks have a D50 particle diameter of at least 50 ?m; depositing an electroactive material selected from silicon and alloys thereof into the micropores and/or mesopores of the porous carbon frameworks using a chemical vapor infiltration process in a fluidized bed reactor, to provide intermediate particles; and comminuting the intermediate particles to provide said composite particles.

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which granular silicon is flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged in parallel and housed within a shell. The annealing device and method are suitable for a continuous process.

Abstract: This disclosure concerns embodiments of an annealing device and a method for annealing flowable, finely divided solids, such as annealing granular silicon to reduce a hydrogen content of the granular silicon. The annealing device comprises at least one tube through which flowable, finely divided solids are flowed downwardly. The tube includes a heating zone and (i) a residence zone below the heating zone, (ii) a cooling zone below the heating zone, or (iii) a residence zone below the heating zone and a cooling zone below the residence zone. An inert gas is flowed upwardly through the tube. The tube may be constructed from two or more tube segments. The annealing device may include a plurality of tubes arranged and housed within a shell. The annealing device and method are suitable for a continuous process.

Abstract: Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.

Abstract: Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.

Abstract: Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.

Abstract: Segmented silicon carbide liners for use in a fluidized bed reactor for production of polysilicon-coated granulate material are disclosed, as well as methods of making and using the segmented silicon carbide liners. Non-contaminating bonding materials for joining silicon carbide segments also are disclosed. One or more of the silicon carbide segments may be constructed of reaction-bonded silicon carbide.

Abstract: Apparatus and methods for consolidating granular silicon and determining trace elements content of the consolidated silicon are disclosed. Silicon granules are placed in a vessel, and a silicon slug of known purity is embedded at least partially in the granules. The slug is preheated to a temperature sufficient to couple with an induction heater. As the silicon slug melts, silicon granules adjacent the molten silicon also melt. The vessel passes through an induction coil to successively inductively heat and melt regions of the silicon granules from the leading end to the trailing end with each region solidifying as the molten silicon exits the induction coil to provide a multicrystalline silicon ingot. The multicrystalline silicon ingot is sliced into wafers, which are analyzed by low-temperature Fourier transform infrared spectroscopy to determine levels of trace elements in the ingot.

Abstract: A siloxane composition, comprising from 70 to 99 parts by weight of a solid particulate having a median particle size of from 0.1 to 3000 ?m and from 1 to 30 parts by weight of a binder having a median particle size of from 5 to 250 ?m, wherein the composition is a powder and the binder comprises a siloxane resin having the formula: (R13SiO1/2)w(R12SiO2/2)x(R1SiO3/2)y(SiO4/2)z, wherein each R1 is independently selected from hydrogen, hydrocarbyl, substituted hydrocarbyl, —O?NR2R3, —OR2, —O—R4—OR2, and an epoxy-substituted organic group, wherein R2 is C1 to C8 hydrocarbyl, R3 is R2 or —H, R4 is hydrocarbylene, w+x+y+z=1, y/(w+x+y+z) is at least 0.67, and the siloxane resin has a softening point of from 30 to 115° C.; an agglomerate, and a method preparing the agglomerate.

Abstract: Metallurgical grade silicon is purified by removing metallic impurities and non-metallic impurities. The object is to produce a silicon species that is suitable for use as solar grade silicon. The process involves grinding metallurgical grade silicon containing metallic and non-metallic impurities to a silicon powder consisting of particles of silicon having a diameter of less than about 5 millimeter. While maintaining the ground silicon powder in the solid state, the ground silicon powder is heated to a temperature less than the melting point of silicon (1410° C.) under reduced pressure. The heated ground silicon powder is maintained at that temperature for a period of time sufficient to enable at least one metallic or non-metallic impurity to be removed from the metallurgical grade silicon.