Abstract: A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0<x<1. Each transition metal is dispersed uniformly throughout the 2D MOF. The 2D MOF is synthesized by combining a first transition metal precursor, a second transition metal precursor, and a linker; agitating the solution; and heating the solution to yield a crystalline two-dimensional metal-organic framework alloy.

Abstract: A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0<x<1. Each transition metal is dispersed uniformly throughout the 2D MOF. The 2D MOF is synthesized by combining a first transition metal precursor, a second transition metal precursor, and a linker; agitating the solution; and heating the solution to yield a crystalline two-dimensional metal-organic framework alloy.

Abstract: Forming a two-dimensional polymeric sheet includes translating a portion of a flexible substrate through a first liquid precursor to coat the portion of the flexible substrate with the first liquid precursor, thereby yielding a precursor-coated portion of the flexible substrate. The precursor-coated portion of the flexible substrate is translated through an interface between the first liquid precursor and a second liquid precursor, thereby reacting the first liquid precursor on the precursor-coated portion of the flexible substrate with the second liquid precursor to yield a polymer-coated portion of the flexible substrate.

Abstract: Octaaminonaphthalene and a method of synthesizing octaaminonaphthalene are described. A two-dimensional coordination polymer and a method of synthesizing the two-dimensional coordination polymer are described. The two-dimensional coordination polymer includes ligands including anchorage sites, and metal linkers, each metal linker including a metal and an organic moiety. Each metal linker is coupled to two ligands via the anchorage sites. Synthesizing the two-dimensional coordination polymer includes contacting a first liquid precursor with a second liquid precursor at an interface, reacting the metal linker and the water-soluble ligand to yield a two-dimensional coordination polymer at the interface, and removing the two-dimensional coordination polymer from the interface.

Abstract: Octaaminonaphthalene and a method of synthesizing octaaminonaphthalene are described. A two-dimensional coordination polymer and a method of synthesizing the two-dimensional coordination polymer are described. The two-dimensional coordination polymer includes ligands including anchorage sites, and metal linkers, each metal linker including a metal and an organic moiety. Each metal linker is coupled to two ligands via the anchorage sites. Synthesizing the two-dimensional coordination polymer includes contacting a first liquid precursor with a second liquid precursor at an interface, reacting the metal linker and the water-soluble ligand to yield a two-dimensional coordination polymer at the interface, and removing the two-dimensional coordination polymer from the interface.

Abstract: Forming a two-dimensional Janus layer includes forming a layer of MX2, where M is a transition metal and X is a first chalcogen, plasma etching the layer of MX2 to remove X from the top layer, thereby yielding an etched layer, and contacting the etched layer with a second chalcogen Y. The second chalcogen is different than the first chalcogen, resulting in a two-dimensional Janus layer including MXY.

Abstract: A two-dimensional metal-organic framework (2D MOF) includes a first transition metal M1 and a second transition metal M2. The first transition metal and the second transition metal are different and are coupled by a linker group L to yield a two-dimensional metal-organic framework alloy having a formula M1xM21-xL, where 0<x<1. Each transition metal is dispersed uniformly throughout the 2D MOF. The 2D MOF is synthesized by combining a first transition metal precursor, a second transition metal precursor, and a linker; agitating the solution; and heating the solution to yield a crystalline two-dimensional metal-organic framework alloy.

Abstract: Octaaminonaphthalene and a method of synthesizing octaaminonaphthalene are described. A two-dimensional coordination polymer and a method of synthesizing the two-dimensional coordination polymer are described. The two-dimensional coordination polymer includes ligands including anchorage sites, and metal linkers, each metal linker including a metal and an organic moiety. Each metal linker is coupled to two ligands via the anchorage sites. Synthesizing the two-dimensional coordination polymer includes contacting a first liquid precursor with a second liquid precursor at an interface, reacting the metal linker and the water-soluble ligand to yield a two-dimensional coordination polymer at the interface, and removing the two-dimensional coordination polymer from the interface.

Abstract: Forming a two-dimensional polymeric sheet includes translating a portion of a flexible substrate through a first liquid precursor to coat the portion of the flexible substrate with the first liquid precursor, thereby yielding a precursor-coated portion of the flexible substrate. The precursor-coated portion of the flexible substrate is translated through an interface between the first liquid precursor and a second liquid precursor, thereby reacting the first liquid precursor on the precursor-coated portion of the flexible substrate with the second liquid precursor to yield a polymer-coated portion of the flexible substrate.

Abstract: Synthesizing a metal-organic-framework includes combining a first solution and a second solution to yield a synthetic medium. The first solution typically includes a solvent, an inhibitor, a metal capping agent, a ligand, and a metal source, and the second solution typically includes a deprotonating agent and a buffer. The metal and the ligand are reacted in the synthetic medium to yield a two-dimensional metal-organic-framework in the form of a nanosheet, and the two-dimensional metal-organic-framework is removed from the synthetic medium. The two-dimensional metal-organic framework has an aspect ratio of at least 300 or at least 1000.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.

Abstract: Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In another embodiment, the semiconductor device includes a semiconductor layer and a zero gap semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the semiconductor layer, which forms a Schottky barrier. In another embodiment, a semiconductor device includes first and second semiconductor layers and a semimetal stack. In another embodiment, a semiconductor device includes first and second semiconductor layers and a zero gap semiconductor layer. The first semiconductor layer includes a first semiconducting material and the second semi conductor layer includes a second semiconducting material formed on the first semiconductor layer. The semimetal stack/zero gap semiconductor layer is formed on the second semiconductor layer, which forms a Schottky barrier.