Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.

Abstract: Disclosed herein is a scribing wheel having a predetermined thickness and a disk shape. The scribing wheel includes: a wheel body configured in such a way that at least a peripheral edge portion thereof is gradually reduced in thickness from the center to the radial outside; and a cutter part including recesses and cutting blade teeth which are alternately arranged along the peripheral edge portion. Each recess is formed by a combination of side recess portions formed in opposite side surfaces of the peripheral edge portion of the wheel body and an edge recess portion formed in the peripheral edge of the wheel body.

Abstract: The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.

Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.

Abstract: The present invention relates to an electrodeposited diamond wire saw using patterned non-conductive materials in which non-conductive materials are pre-patterned along the outer circumference of a wire on which diamond grit should not be rubbed, before the diamond grit is upset, in order to efficiently improve the manufacturing process, and to a method for manufacturing same. According to one preferred embodiment of the invention, the method for manufacturing an electrodeposited diamond wire saw includes: printing a masking solution on the outer circumference of a wire in a plurality of directions when the wire is inserted for patterning; and upsetting diamond grit on the remaining regions of the outer circumference of the wire, with the exception of the patterned region.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: Disclosed herein is a scribing wheel having a predetermined thickness and a disk shape. The scribing wheel includes: a wheel body configured in such a way that at least a peripheral edge portion thereof is gradually reduced in thickness from the center to the radial outside; and a cutter part including recesses and cutting blade teeth which are alternately arranged along the peripheral edge portion. Each recess is formed by a combination of side recess portions formed in opposite side surfaces of the peripheral edge portion of the wheel body and an edge recess portion formed in the peripheral edge of the wheel body.

Abstract: Provided is a chemical mechanical polishing (CMP) apparatus that includes a swing unit installed apart from a platen, on which a CMP pad to be conditioned is placed, at a predetermined interval, a connector installed on an upper end of the swing unit at one end thereof in a perpendicular direction to the swing unit and pivoting around the swing unit above the CMP pad, a rotator rotatably installed on the other end of the connector, a CMP pad conditioner coupled to the rotator and conditioning the CMP pad when rotated, and a vibration meter installed on the connector and detecting vibrations to measure a vibration acceleration of the CMP pad conditioner, thereby predicting a wear rate of the CMP pad based on the vibration acceleration and a state in which the CMP pad conditioner is installed or being used.

Abstract: The present invention relates to an electrodeposited diamond wire saw using patterned non-conductive materials in which non-conductive materials are pre-patterned along the outer circumference of a wire on which diamond grit should not be rubbed, before the diamond grit is upset, in order to efficiently improve the manufacturing process, and to a method for manufacturing same. According to one preferred embodiment of the invention, the method for manufacturing an electrodeposited diamond wire saw includes: printing a masking solution on the outer circumference of a wire in a plurality of directions when the wire is inserted for patterning; and upsetting diamond grit on the remaining regions of the outer circumference of the wire, with the exception of the patterned region.

Abstract: The present invention relates to a wafer retaining ring used in a chemical mechanical polishing process (CMP) for semiconductor device manufacturing, and in particular, to a pad conditioning and wafer retaining ring designed to prevent a wafer from slipping during the CMP process and, simultaneously condition a pad uniformly, and to a manufacturing method thereof.

Abstract: The present invention relates to a CMP pad conditioner having a substrate and a cutting tip pattern formed on at least one surface of the substrate, and more particularly to a CMP pad conditioner having cutting tip patterns, in which the cutting tip patterns have an improved structure that can increase the productivity of the CMP pad conditioner and that can sufficiently ensure the strength and safety of the cutting tip patterns.

Abstract: This invention relates to a conditioner for a CMP (Chemical Mechanical Polishing) pad, which is used in a CMP process which is part of the fabrication of a semiconductor device, and more particularly, to a CMP pad conditioner in which the structure of the cutting tips is such that the change in the wear of the polishing pad is not great even when different kinds of slurry are used and when there are changes in pressure of the conditioner, and to a method of manufacturing the same.

Abstract: The present invention relates to a conditioner for a chemical-mechanical planarization (CMP) pad, which is used in a CMP process that is part of a semiconductor element manufacturing process, and more particularly, to a conditioner for a soft pad, and a method of manufacturing the same, wherein the conditioner can be used under CMP conditions using a slurry having a small amount of polishing particles, and/or a porous pad having comparatively low hardness and very high porosity.

Abstract: A microreactor may include a reaction channel having at least one curved microchannel, the at least one curved microchannel having an outer and inner curved surfaces and being configured to generate a centrifugal force, an inlet configured to supply at least one reactant into the reaction channel, and an outlet bifurcated into a first sub-outlet in communication with the inner curved surface of the at least one curved microchannel and a second sub-outlet in communication with the outer curved surface of the at least one curved microchannel.

Abstract: A microreactor may include a reaction channel having at least one curved microchannel, the at least one curved microchannel having an outer and inner curved surfaces and being configured to generate a centrifugal force, an inlet configured to supply at least one reactant into the reaction channel, and an outlet bifurcated into a first sub-outlet in communication with the inner curved surface of the at least one curved microchannel and a second sub-outlet in communication with the outer curved surface of the at least one curved microchannel.

Abstract: An apparatus and method for sputter depositing a magnetic film on a substrate to produce a magnetic device such as magnetic recording heads for reading digital information from a storage medium. The apparatus of the invention includes a sputtering chamber containing a target and a substrate, and a magnet array disposed within the chamber to form a substantially parallel magnetic field at a surface of the substrate. The sputtering chamber reduces interference between the magnetron and the magnet array by providing a long throw distance and/or a grounded collimator. The magnet array is preferably a circular ring.

Abstract: A method and apparatus for detecting target misalignment and plasma instability in a sputtering chamber in a semiconductor fabrication system is provided. In certain embodiments, a detector is utilized to monitor the voltage of the power applied to bias the target. If the voltage fluctuates excessively, plasma instability and target misalignment is indicated.