Abstract: In the present invention, an alkaline first etching liquid is fed to a substrate, whereby an etching target representing a silicon monocrystal and/or polysilicon is etched. An alkaline second etching liquid is fed to the substrate after or before the first etching liquid is fed to the substrate, whereby the etching target is etched, the second etching liquid containing a compound that inhibits contact between hydroxide ions and the etching target, the difference between the maximum value and the minimum value of the etching speed with respect to the (110) face, the (100) face, and the (111) face of silicon being smaller in the second etching liquid than in the first etching liquid, and the maximum value of the etching speed being smaller in the second etching liquid than in the first etching liquid.

Abstract: A training device includes an experimental data acquirer that acquires a first processing amount indicating a difference between a film thickness obtained before a process for a film and a film thickness obtained after the process for the film, after the process for the film is executed according to processing conditions including a variable condition indicating a relative position of a nozzle with respect to a substrate, with the relative position varying over time, a converter that converts the variable condition into compressed data and a model generator that generates a learning model, with the learning model executing machine learning using training data that includes the compressed data and the first processing amount corresponding to the processing conditions and predicting a second processing amount.

Abstract: According to the present invention, a substrate W is provided with a recess 95. The width of the recess 95 is smaller than the depth of the recess 95. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surface 95s and in at least a part of the lower part of the lateral surface 95s. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.

Abstract: A substrate processing condition setting method includes acquiring, causing, and setting. In the acquiring, a plurality of estimation processing results are acquired by inputting a plurality of processing conditions to a trained model that is subjected to machine training based on a training processing condition and a processing result obtained by processing a substrate under the training processing condition. In the causing, a display section is caused to display an image based on the estimation processing results. In the setting, one processing condition corresponding to one estimation processing result of the estimation processing results is set, as an actual processing condition in substrate processing, based on the image displayed on the display section.

Abstract: A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-

Abstract: A substrate processing apparatus includes a spin chuck that holds a substrate, and a fluid nozzle disposed to face a principal surface of the substrate which is held by the spin chuck. The fluid nozzle includes a gas discharge port from which a gas is discharged radially from the center side of the principal surface of the substrate to the peripheral edge side, and a gas flow passage through which the gas is supplied to the gas discharge port, the gas flow passage having a tubular shape along an intersecting direction with respect to the principal surface of the substrate. The gas flow passage has a gas retaining portion whose flow passage cross-sectional area is larger than other portions of the gas flow passage, and a rectifying structure provided in a portion of the gas flow passage different from the gas retaining portion, the rectifying structure that rectifies a flow of the gas in the gas flow passage.

Abstract: A substrate treating apparatus includes a treating housing and a gas supply unit. The treating housing treats substrates in the interior thereof. The gas supply unit supplies a gas to the interior of the treating housing. The gas supply unit has a filter, a duct, and a fan. The filter is located in an upper part of the treating housing. The filter blows off the gas to the interior of the treating housing. The duct is provided in the exterior of the treating housing. The duct is connected to the filter. The fan is provided in the exterior of the treating housing. The fan is connected to the duct. The fan is located in a position not overlapping the filter in plan view. At least part of the fan is located in the same height position as the treating housing.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: A chemical liquid preparation method of preparing a TMAH-containing chemical liquid, including, a correspondence relationship preparing step of preparing a correspondence relationship between a supply flow rate ratio between an oxygen-containing gas and an inert-gas-containing gas and a convergent dissolved oxygen concentration in the TMAH-containing chemical liquid that is converged to when the oxygen-containing gas and the inert-gas-containing gas are supplied into the TMAH-containing chemical liquid; a concentration setting step of setting a target dissolved oxygen concentration in the TMAH-containing chemical liquid; a supply-flow-rate-ratio acquiring step of acquiring the supply flow rate ratio between the oxygen-containing gas and the inert-gas-containing gas corresponding to the target dissolved oxygen concentration in accordance with the correspondence relationship prepared in the correspondence relationship preparing step; and a gas supplying step of supplying the oxygen-containing gas and the inert-

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.

Abstract: A substrate processing method includes a liquid film forming step of forming a liquid film, a liquid film heat retaining step of keeping the liquid film warm, a gas phase layer forming step of forming a gas phase layer which holds the processing liquid on a center portion of the liquid film, an opening forming step of forming an opening in the center portion of the liquid film by excluding the processing liquid held by the gas phase layer, a substrate rotating step of rotating the substrate around a rotation axis, and an opening expanding step of expanding the opening, while a state in which the gas phase layer is formed on an inner circumferential edge of the liquid film is maintained, by moving the irradiation region toward a circumferential edge portion of the substrate while the liquid film heat retaining step and the substrate rotating step are performed.

Abstract: According to the present invention, a substrate W is provided with a recess 95. The width of the recess 95 is smaller than the depth of the recess 95. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surface 95s and in at least a part of the lower part of the lateral surface 95s. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.

Abstract: In the present invention, an alkaline first etching liquid is fed to a substrate, whereby an etching target representing a silicon monocrystal and/or polysilicon is etched. An alkaline second etching liquid is fed to the substrate after or before the first etching liquid is fed to the substrate, whereby the etching target is etched, the second etching liquid containing a compound that inhibits contact between hydroxide ions and the etching target, the difference between the maximum value and the minimum value of the etching speed with respect to the (110) face, the (100) face, and the (111) face of silicon being smaller in the second etching liquid than in the first etching liquid, and the maximum value of the etching speed being smaller in the second etching liquid than in the first etching liquid.

Abstract: A substrate processing condition setting method includes acquiring, causing, and setting. In the acquiring, a plurality of estimation processing results are acquired by inputting a plurality of processing conditions to a trained model that is subjected to machine training based on a training processing condition and a processing result obtained by processing a substrate under the training processing condition. In the causing, a display section is caused to display an image based on the estimation processing results. In the setting, one processing condition corresponding to one estimation processing result of the estimation processing results is set, as an actual processing condition in substrate processing, based on the image displayed on the display section.

Abstract: An alkaline etchant containing a quaternary ammonium hydroxide, water, and an inhibitory substance for inhibiting contact between hydroxide ions generated from the quaternary ammonium hydroxide and objects P1 to P3 to be etched is prepared. The prepared etchant is supplied to a substrate in which the polysilicon-containing objects P1 to P3 to be etched and objects O1 to O3 not to be etched, which are different from the objects P1 to P3 to be etched, are exposed, thereby etching the objects P1 to P3 to be etched while preventing the objects O1 to O3 not to be etched from being etched.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2 ??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2??(1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.