Patents by Inventor Sei Ryu

Sei Ryu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS OF FABRICATING VERTICAL JFET LIMITED SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS
    Publication number: 20070158658
    Abstract: Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on the drift layer, and an n-type silicon carbide limiting region disposed between the drift layer and a portion of the first p-type region. The limiting region may have a carrier concentration that is greater than the carrier concentration of the drift layer. Methods of fabricating silicon carbide MOSFET devices are also provided.
    Type: Application
    Filed: February 21, 2007
    Publication date: July 12, 2007
    Inventor: Sei Ryu