Abstract: A solid-state imaging device includes a plurality of pixels arranged in matrix form, each pixel including a photoelectric converter and a plurality of first transfer electrodes, and a plurality of control lines connected to mutually-corresponding ones of the first transfer electrodes in a plurality of pixels arranged in a specific row. The plurality of pixels include a plurality of first pixels and second pixels. Each of the first pixels includes a floating diffusion layer and a readout circuit. Each of the second pixels shares the floating diffusion layer with one of the first pixels arranged in a column direction. At least some of the plurality of control lines are further connected to the first transfer electrodes of pixels that are arranged adjacent in the column direction to respective ones of the plurality of pixels arranged in the specific row and that share at least one of the floating diffusion layers.

Abstract: A solid-state imaging device includes: a plurality of pixels arranged in a matrix on a semiconductor substrate, wherein each of the plurality of pixels includes: a photoelectric converter that converts received light into a signal charge; a plurality of read gates that each read the signal charge from the photoelectric converter; a plurality of charge accumulators that each accumulate the signal charge read by any one of the plurality of read gates; and a charge holder that receives, from one of the plurality of charge accumulators, transfer of the signal charge accumulated in the charge accumulator, holds the signal charge, and transfers, to one of the plurality of charge accumulators, the signal charge held.

Abstract: A solid-state imaging device includes: pixels arranged in a matrix on a semiconductor substrate. Each of the pixels includes: a photoelectric converter that converts received light into a signal charge; at least one read gate that reads the signal charge from the photoelectric converter; charge accumulators that each accumulate the signal charge read by the at least one read gate; and a charge holder that receives, from one of the charge accumulators, transfer of the signal charge accumulated in the charge accumulator, holds the signal charge, and transfers, to one of the charge accumulators, the signal charge held, each of the charge accumulators includes a part of a transfer channel and a part of a transfer electrode overlapping with the part of the transfer channel in a planar view of the semiconductor substrate, and the transfer channel per one pixel comprises transfer channels.

Abstract: A solid-state imaging device includes pixels arranged in matrix form, each including a photoelectric converter and first transfer electrodes, and control lines connected to mutually-corresponding ones of the first transfer electrodes in pixels arranged in a specific row. The pixels include first pixels that receive visible light and second pixels that receive infrared light. Each of floating diffusion layer-including pixels, which are some of the plurality of pixels, further includes a floating diffusion layer and a readout circuit. Each floating diffusion layer-lacking pixel shares the floating diffusion layer with one of the first pixels arranged in a column direction. At least some of the control lines are further connected to the first transfer electrodes of pixels arranged adjacent in the column direction to respective ones of the pixels arranged in the specific row and that share at least one of the floating diffusion layers.

Abstract: Provided is a method for driving a solid-state imaging device including a unit pixel which includes at least a first pixel including: a photoelectric converter which receives reflected light from an object and converts the reflected light into charge; an exposure resetter which switches between exposure and discharge of the charge in the photoelectric converter; and a plurality of readers which read the charge from the photoelectric converter and include at least a first reader and a second reader. The method includes: performing a first exposure as the exposure that is performed in a first period in which a gate of the first reader is ON; and performing a second exposure as the exposure that is performed in a second period which is started in conjunction with the end of the first period and in which a gate of the second reader is ON.

Abstract: A solid-state imaging device includes pixels arranged in matrix form, each including a photoelectric converter and first transfer electrodes, and control lines connected to mutually-corresponding ones of the first transfer electrodes in pixels arranged in a specific row. The pixels include first pixels that receive visible light and second pixels that receive infrared light. Each of floating diffusion layer-including pixels, which are some of the plurality of pixels, further includes a floating diffusion layer and a readout circuit. Each floating diffusion layer-lacking pixel shares the floating diffusion layer with one of the first pixels arranged in a column direction. At least some of the control lines are further connected to the first transfer electrodes of pixels arranged adjacent in the column direction to respective ones of the pixels arranged in the specific row and that share at least one of the floating diffusion layers.

Abstract: A solid-state imaging device includes a plurality of pixels arranged in matrix form, each pixel including a photoelectric converter and a plurality of first transfer electrodes, and a plurality of control lines connected to mutually-corresponding ones of the first transfer electrodes in a plurality of pixels arranged in a specific row. The plurality of pixels include a plurality of first pixels and second pixels. Each of the first pixels includes a floating diffusion layer and a readout circuit. Each of the second pixels shares the floating diffusion layer with one of the first pixels arranged in a column direction. At least some of the plurality of control lines are further connected to the first transfer electrodes of pixels that are arranged adjacent in the column direction to respective ones of the plurality of pixels arranged in the specific row and that share at least one of the floating diffusion layers.

Abstract: A solid-state imaging device includes: a plurality of pixels arranged in a matrix on a semiconductor substrate, wherein each of the plurality of pixels includes: a photoelectric converter that converts received light into a signal charge; a plurality of read gates that each read the signal charge from the photoelectric converter; a plurality of charge accumulators that each accumulate the signal charge read by any one of the plurality of read gates; and a charge holder that receives, from one of the plurality of charge accumulators, transfer of the signal charge accumulated in the charge accumulator, holds the signal charge, and transfers, to one of the plurality of charge accumulators, the signal charge held.

Abstract: A solid-state imaging device includes: pixels arranged in a matrix on a semiconductor substrate. Each of the pixels includes: a photoelectric converter that converts received light into a signal charge; at least one read gate that reads the signal charge from the photoelectric converter; charge accumulators that each accumulate the signal charge read by the at least one read gate; and a charge holder that receives, from one of the charge accumulators, transfer of the signal charge accumulated in the charge accumulator, holds the signal charge, and transfers, to one of the charge accumulators, the signal charge held, each of the charge accumulators includes a part of a transfer channel and a part of a transfer electrode overlapping with the part of the transfer channel in a planar view of the semiconductor substrate, and the transfer channel per one pixel comprises transfer channels.

Abstract: A plurality of pixels of a solid-state imaging device include: a photoelectric converter which receives light from an object and converts the light into charge; a plurality of readers which read the charge from the photoelectric converter; a plurality of charge accumulators which accumulate the charge of the photoelectric converter; and a transfer controller which performs a transfer control including controlling whether the charge is transferred or blocked from being transferred. The readers read the charge of the photoelectric converter to the charge accumulators, the plurality of pixels include at least a first pixel and a second pixel, and the transfer controller performs the transfer control to cause addition of the charge read from each of the first pixel and the second pixel.

Abstract: An image-capturing device includes an infrared light source configured to emit infrared light, and a solid-state image-capturing device including a plurality of first pixels configured to convert visible light into signal charge and a plurality of second pixels configured to convert infrared light into signal charge, the plurality of first pixels and the plurality of second pixels being arranged on a semiconductor substrate in a matrix. The solid-state image-capturing device outputs, during the same single frame scanning period, a first signal obtained from the plurality of first pixels, a second signal obtained from the plurality of second pixels during a period of time when the infrared light is emitted, and a third signal obtained from the plurality of second pixels during a period of time when the infrared light is not emitted.

Abstract: A plurality of pixels of a solid-state imaging device include: a photoelectric converter which receives light from an object and converts the light into charge; a plurality of readers which read the charge from the photoelectric converter; a plurality of charge accumulators each of which accumulates the charge of the photoelectric converter read from the plurality of readers; and a transfer controller which performs a transfer control including controlling whether the charge accumulated in one of the plurality of charge accumulators is transferred or blocked from being transferred to another one of the plurality of charge accumulators. The transfer controller is disposed between the plurality of charge accumulators.

Abstract: An image-capturing device includes an infrared light source configured to emit infrared light, and a solid-state image-capturing device including a plurality of first pixels configured to convert visible light into signal charge and a plurality of second pixels configured to convert infrared light into signal charge, the plurality of first pixels and the plurality of second pixels being arranged on a semiconductor substrate in a matrix. The solid-state image-capturing device outputs, during the same single frame scanning period, a first signal obtained from the plurality of first pixels, a second signal obtained from the plurality of second pixels during a period of time when the infrared light is emitted, and a third signal obtained from the plurality of second pixels during a period of time when the infrared light is not emitted.

Abstract: An image-capturing device includes an infrared light source configured to emit infrared light, and a solid-state image-capturing device including a plurality of first pixels configured to convert visible light into signal charge and a plurality of second pixels configured to convert infrared light into signal charge, the plurality of first pixels and the plurality of second pixels being arranged on a semiconductor substrate in a matrix. The solid-state image-capturing device outputs, during the same single frame scanning period, a first signal obtained from the plurality of first pixels, a second signal obtained from the plurality of second pixels during a period of time when the infrared light is emitted, and a third signal obtained from the plurality of second pixels during a period of time when the infrared light is not emitted.

Abstract: A plurality of pixels of a solid-state imaging device include: a photoelectric converter which receives light from an object and converts the light into charge; a plurality of readers which read the charge from the photoelectric converter; a plurality of charge accumulators each of which accumulates the charge of the photoelectric converter read from the plurality of readers; and a transfer controller which performs a transfer control including controlling whether the charge accumulated in one of the plurality of charge accumulators is transferred or blocked from being transferred to another one of the plurality of charge accumulators. The transfer controller is disposed between the plurality of charge accumulators.

Abstract: Provided is a method for driving a solid-state imaging device including a unit pixel which includes at least a first pixel including: a photoelectric converter which receives reflected light from an object and converts the reflected light into charge; an exposure resetter which switches between exposure and discharge of the charge in the photoelectric converter; and a plurality of readers which read the charge from the photoelectric converter and include at least a first reader and a second reader. The method includes: performing a first exposure as the exposure that is performed in a first period in which a gate of the first reader is ON; and performing a second exposure as the exposure that is performed in a second period which is started in conjunction with the end of the first period and in which a gate of the second reader is ON.

Abstract: A plurality of pixels of a solid-state imaging device include: a photoelectric converter which receives light from an object and converts the light into charge; a plurality of readers which read the charge from the photoelectric converter; a plurality of charge accumulators which accumulate the charge of the photoelectric converter; and a transfer controller which performs a transfer control including controlling whether the charge is transferred or blocked from being transferred. The readers read the charge of the photoelectric converter to the charge accumulators, the plurality of pixels include at least a first pixel and a second pixel, and the transfer controller performs the transfer control to cause addition of the charge read from each of the first pixel and the second pixel.

Abstract: Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges.

Abstract: Provided are an imaging apparatus with reduced variations in ranging results and increased ranging precision, and its driving method. The imaging apparatus includes a near-infrared light source and a solid-state imaging device. The solid-state imaging device includes a photoelectric conversion region in which a plurality of photoelectric converters is arranged in a matrix, a plurality of vertical transfer units for transferring signal charges generated in the photoelectric converters in a direction perpendicular to a row direction of the photoelectric conversion region, a plurality of horizontal transfer units for transferring the signal charges in a direction horizontal to the row direction of the photoelectric conversion region, and a plurality of charge detectors for amplifying and outputting the signal charges.

Abstract: Provided is an a imaging device that acquires a distance image excluding influence of background light in one frame scanning period and acquires a visible image in a separate frame from a single imaging sensor, and includes an infrared light source that emits infrared light, and a solid state imaging device including a plurality of first pixels and a plurality of second pixels, which respectively include vertical overflow drains, and are arranged in a matrix on a semiconductor substrate, the plurality of first pixels converting the infrared light into signal charges, and the plurality of second pixels converting visible light into signal charges.