Abstract: A display device includes a first substrate, a gate line disposed on the first substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor layer disposed on the gate insulating layer, a data line disposed on the semiconductor layer and connected to a source electrode, a drain electrode disposed on the semiconductor layer and facing the source electrode and a passivation layer disposed on the data line, in which the semiconductor layer is formed of an oxide semiconductor including indium, tin, and zinc. The indium is present in an amount of about 5 atomic percent (at %) to about 50 at % , and a ratio of the zinc to the tin is about 1.38 to about 3.88.

Abstract: A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. In Chemical Formula 1, R is at least one substituent selected from a saturated hydrocarbon or an unsaturated hydrocarbon having from 1 to about 25 carbon atoms, and x and y may each independently be from 1 to about 200, and wherein each wavy line indicates a bond to an H atom or to an x siloxane unit or a y siloxane unit, or a bond to an x siloxane unit or a y siloxane unit of another siloxane chain comprising x siloxane units or y siloxane units or a combination thereof.

Abstract: An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.

Abstract: A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.

Abstract: A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.