Patents by Inventor Seichiyou Makihira

Seichiyou Makihira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing an implant material
    Patent number: 9138507
    Abstract: A method for manufacturing an implant material includes preparing a base material for implant, removing moisture from a chamber in which the base material is placed, and introducing material gas as a carbon source and a silicon source into the chamber after the removal of the moisture to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition.
    Type: Grant
    Filed: November 11, 2014
    Date of Patent: September 22, 2015
    Assignee: TOYO ADVANCED TECHNOLOGIES CO., LTD.
    Inventors: Hiroki Nikawa, Seichiyou Makihira, Yuichi Mine, Yoshinori Abe, Tatsuyuki Nakatani, Keishi Okamoto, Yuki Nitta
  • METHOD FOR MANUFACTURING AN IMPLANT MATERIAL
    Publication number: 20150064339
    Abstract: A method for manufacturing an implant material includes preparing a base material for implant, removing moisture from a chamber in which the base material is placed, and introducing material gas as a carbon source and a silicon source into the chamber after the removal of the moisture to form a carbon thin film containing a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded on a surface of the base material by ionized deposition.
    Type: Application
    Filed: November 11, 2014
    Publication date: March 5, 2015
    Inventors: Hiroki Nikawa, Seichiyou Makihira, Yuichi Mine, Yoshinori Abe, Tatsuyuki Nakatani, Keishi Okamoto, Yuki Nitta
  • IMPLANT MATERIAL AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20110318714
    Abstract: An implant material includes a base material, and a silicon-containing carbon thin film formed on a surface of the base material. The carbon thin film contains a C—C component in which carbon atoms are bonded, and a SiC component in which carbon and silicon atoms are bonded, and a ratio of the SiC component is 0.06 or higher.
    Type: Application
    Filed: February 10, 2009
    Publication date: December 29, 2011
    Applicant: TOYO ADVANCED TECHNOLOGIES CO., LTD.
    Inventors: Hiroki Nikawa, Seichiyou Makihira, Yuichi Mine, Yoshinori Abe, Tatsuyuki Nakatani, Keishi Okamoto, Yuki Nitta