Patents by Inventor Seifeddine ZHIOU

Seifeddine ZHIOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing an intermetallic contact based on Ni on InGaAs
    Patent number: 10361087
    Abstract: A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InxGa1-xAs material, the contact includes an Ni—InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InxGa1-xAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.
    Type: Grant
    Filed: June 29, 2018
    Date of Patent: July 23, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Philippe Rodriguez, Seifeddine Zhiou, Fabrice Nemouchi, Patrice Gergaud
  • PROCEDE DE REALISATION DE CONTACT INTERMETALLIQUE A BASE DE NI SUR INXGA1-XAS
    Publication number: 20190006182
    Abstract: A process for manufacturing an intermetallic contact on the surface of a layer or of a substrate of oriented InxGa1-xAs material, the contact includes an Ni—InGaAs intermetallic compound, the intermetallic compound having a hexagonal crystallographic structure that may have: a first texture or a second texture formed at a second nucleation temperature above the first nucleation temperature; the process comprising the following steps: the production of nomograms defining, for a thickness of Ni deposited, the time to completely consume the initial thickness of Ni as a function of the annealing temperature, the annealing temperature being below the nucleation temperature of the second texture; the localized deposition of Ni on the surface of the InxGa1-xAs material; an annealing step applying the pair of parameters: time required/annealing temperature, deduced from the nomograms, comprising at least one temperature rise step and at least one temperature hold of the final annealing temperature.
    Type: Application
    Filed: June 29, 2018
    Publication date: January 3, 2019
    Inventors: Philippe RODRIGUEZ, Seifeddine ZHIOU, Fabrice NEMOUCHI, Patrice GERGAUD