Abstract: A method for producing an oxide superconductor comprises the steps of: forming on a substrate a layer of elements deficient in at least one of the elements composing a desired oxide superconductor and immersing the layer formed substrate into a solution containing a supplementary element which is at least one of the deficient oxide superconductor composing elements.

Abstract: A method of forming a pattern of a transparent conducting film such as an indium tin oxide film, formed on the surface of a substrate including Si and being heated. A two-step etching method is employed, in which the transparent conducting film is wet-etched by an aqueous solution of a halogenide and thereafter an interfacial reacted layer generated at the interface of the transparent conducting film and substrate including Si is etched by a plasma etching method using a halogen.

Abstract: A photosensor comprises an insulator layer, a first electrode on the insulator layer for collecting first type carriers formed upon incidence of optical radiation, the first electrode being segmented into a plurality of pixel electrodes separated from each other by a gap, a first silicon carbide layer provided on the insulator layer to cover the plurality of pixel electrodes including the gap separating adjacent pixel electrodes, an optical absorption layer of amorphous silicon provided on the silicon carbide layer continuously such that the amorphous silicon layer extends over the plurality of pixel electrodes and the gap between adjacent pixel electrodes, the optical absorption layer producing the first type carriers and second type carriers having opposing polarity to the first type carriers upon incidence of the optical radiation, a second silicon carbide layer provided on the amorphous silicon layer for protecting the optical absorption layer from chemical reaction, and a second electrode of a transparen

Abstract: In the course of a production of a semiconductor device with a multilayer insulating layer, when a contact hole is opened in the multilayer insulating layer, an insulating layer activating a metal selective vapor-growth appears at the side wall of the contact hole. A thin metal (e.g., tungsten) layer is selectively deposited in the contact hole. In another case, another metal layer appears within the contact hole. An insulating film preventing a metal selective vapor-growth is deposited over the whole surface of the side wall of the contact hole, the metal layer and a top surface of the multilayer insulating layer, and is anisotropically etched to leave a portion of the film lying on the side wall only as a side wall insulating film. The contact hole is completely filled with another metal (tungsten) by a selective vapor-growth method, to flatten an exposed surface, and then a conductor (e.g.

Abstract: A method for fabricating a superconductive film composed of a RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x compound, or a (Bi.Sr.Ca.Cu.O) compound. In a first embodiment, oxides or carbonates of the component materials, namely Y.sub.2 O.sub.3, BaCO.sub.3, and CuO are mixed in atomic ratios of 1:2:3, according to the chemical formula of RE.sub.1 Ba.sub.2 Cu.sub.3 O.sub.x, and sintered to create a rhombic perovskite structure. The sintered mixture is powdered again, with added powdered amounts of Y.sub.2 O.sub.3 and powdered metallic Cu, and sintered. The sintered product is used as the source for an electron beam evaporator. In a second embodiment the (Bi.Sr.Ca.Cu.O) compound is formed into a sintered pellet which is composed of a mixture of one part of BiO, 3-15 parts of SrCO.sub.3, 4-30 parts of CaCO.sub.3, and 2-5 parts of CuO, in atomic ratios of Bi, Sr, Ca and Cu.