Patents by Inventor Seiho Choi

Seiho Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Pressure sensor and display device having the same
    Patent number: 10573761
    Abstract: A pressure sensor includes a semiconductor layer, a gate electrode, a gate insulating layer, and a source electrode, and may be incorporated as a switching transistor in a display device. The gate electrode is configured to overlap the semiconductor layer. The gate insulating layer is disposed between the semiconductor layer and the gate electrode and includes a first insulating layer disposed on a surface of the semiconductor layer that faces the gate electrode and a second insulating layer comprising an elastic material disposed at least between the first insulating layer and the gate electrode. The source electrode and a drain electrode respectively coupled to spaced portions of the semiconductor layer.
    Type: Grant
    Filed: December 22, 2017
    Date of Patent: February 25, 2020
    Assignees: Samsung Display Co., Ltd., UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
    Inventors: Jae Ik Lim, Won Sang Park, Hye Yong Chu, Jang-Ung Park, Sung-Ho Shin, Sangyoon Jin, Seiho Choi
  • PRESSURE SENSOR AND DISPLAY DEVICE HAVING THE SAME
    Publication number: 20180182901
    Abstract: A pressure sensor includes a semiconductor layer, a gate electrode, a gate insulating layer, and a source electrode, and may be incorporated as a switching transistor in a display device. The gate electrode is configured to overlap the semiconductor layer. The gate insulating layer is disposed between the semiconductor layer and the gate electrode and includes a first insulating layer disposed on a surface of the semiconductor layer that faces the gate electrode and a second insulating layer comprising an elastic material disposed at least between the first insulating layer and the gate electrode. The source electrode and a drain electrode respectively coupled to spaced portions of the semiconductor layer.
    Type: Application
    Filed: December 22, 2017
    Publication date: June 28, 2018
    Inventors: Jae Ik Lim, Won Sang Park, Hye Yong Chu, Jang-Ung Park, Sung-Ho Shin, Sangyoon Ji, Seiho Choi