Abstract: An organic light emitting display and a method of manufacturing the same that reduces the number of the masks needed and improves production yield by forming alignment marks during an SGS crystallization process for producing a thin film transistor. The organic light emitting display includes a substrate having a display region and a non-display region, at least one pixel region formed of a thin film transistor and an organic light emitting element electrically coupled to each other in the display region of the substrate, and at least one alignment mark formed in a non-display region of the substrate by the SGS crystallization process.

Abstract: A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.

Abstract: An organic light emitting display and a fabricating method thereof in which an alignment mark is formed in the non-display region. The organic light emitting display includes a substrate having a display region and a non-display region; a buffer layer formed the overall substrate; a gate insulating layer; a gate electrode formed on the gate insulating layer corresponding to the active layer; an interlayer dielectric layer formed on the gate insulating layer; a source/drain electrode formed on the interlayer dielectric layer and electrically coupled to the active layer; an insulating layer formed on the source/drain electrode; and an organic light emitting diode formed on the insulating layer and electrically coupled to the source/drain electrode. Further, the organic light emitting display includes an alignment mark formed on one of the substrate and the buffer layer.

Abstract: A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.

Abstract: An organic light emitting display and a method of manufacturing the same that reduce the number of the masks needed and improve production yield by forming alignment marks during an SGS crystallization process for producing a thin film transistor includes a substrate having a display region and a non-display region, at least one pixel region formed of a thin film transistor and an organic light emitting element electrically coupled each other in the display region of the substrate, and at least one alignment mark formed in a non-display region of the substrate by SGS crystallization process.

Abstract: An organic light emitting display and a fabricating method thereof in which an alignment mark is formed in the non-display region. The organic light emitting display includes a substrate having a display region and a non-display region; a buffer layer formed the overall substrate; a gate insulating layer; a gate electrode formed on the gate insulating layer corresponding to the active layer; an interlayer dielectric layer formed on the gate insulating layer; a source/drain electrode formed on the interlayer dielectric layer and electrically coupled to the active layer; an insulating layer formed on the source/drain electrode; and an organic light emitting diode formed on the insulating layer and electrically coupled to the source/drain electrode. Further, the organic light emitting display includes an alignment mark formed on one of the substrate and the buffer layer.

Abstract: A transistor includes a substrate, an active region including a source region, a channel region, and a drain region which are crystallized using an SGS crystallization method and are formed on the substrate so that a grain size of a first annealed portion and a second annealed portion are different from each other, a gate insulating layer formed on the active region, and a gate electrode formed on the gate insulating layer.