Abstract: A deposition apparatus for forming a thin film by depositing material particles separated from a deposition material on a deposition object by irradiation with a plasma supplied from a plasma generator into a chamber including a hearth accommodating the deposition material, and a capturing mechanism installed near the hearth and outside the range of a moving region of the material particles moving toward the deposition object. The moving region is determined by a width in an incident direction in which the plasma is incident on the deposition material, and the width of the deposition object 10. The capturing mechanism captures at least some material particles separated from the deposition material and existing outside the range of the moving region.

Abstract: The present invention provides a plasma treatment apparatus which has a plurality of UR-type plasma guns including reflected electron return electrodes, and can stably form a film having uniform film thickness and film quality. A plasma treatment apparatus according to one embodiment of the present invention sets an electric potential of at least one UR-type plasma gun at a floating potential. In one embodiment of the present invention, all UR-type plasma guns may be set at floating potentials. In other embodiment of the present invention, only one UR-type plasma gun may be grounded, and the other UR-type plasma guns may be set at floating potentials.