Patents by Inventor Seiichi Itabashi

Seiichi Itabashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Waveguide path coupling-type photodiode
    Patent number: 8467637
    Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)? to ? [?: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than ?/(2 ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
    Type: Grant
    Filed: April 30, 2008
    Date of Patent: June 18, 2013
    Assignees: NEC Corporation, Nippon Telegraph and Telephone Corporation
    Inventors: Junichi Fujikata, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi, Tai Tsuchizawa, Seiichi Itabashi
  • WAVEGUIDE PATH COUPLING-TYPE PHOTODIODE
    Publication number: 20100119192
    Abstract: In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)? to ? [?: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than ?/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.
    Type: Application
    Filed: April 30, 2008
    Publication date: May 13, 2010
    Applicants: NEC CORPORATION, NIPPON TELEGRAPH AND TELEPHONE CORPORATION
    Inventors: Junichi Fujikata, Jun Ushida, Daisuke Okamoto, Kenichi Nishi, Keishi Ohashi, Tai Tsuchizawa, Seiichi Itabashi