Abstract: A technique that can reduce a size of a circuit in a radio receiver device such as a reader-writer device of RFID is provided. In a semiconductor integrated circuit device (IC) used for a transceiver such as a reader-writer in a UHF band electronic tag system, an operating unit including a multiplier, an adder, and a register is disposed between a baseband signal generating unit and a DAC unit. By this structure, an ASK modulation depth and a DC bias of an ASK modulation signal can be adjusted with a simple configuration.

Abstract: A semiconductor device which is provided with an electrode and/or an interconnection made of a refractory metal film containing silicon oxide is disclosed. A refractory metal film containing silicon oxide has high capability of blocking penetration of ions and is suitable for being employed as a mask for forming a source and a drain of an MOS transistor by ion-implantation and as it has strong adhesion with an insulation film improves reliability of a semiconductor device.

Abstract: A power transmission system for a four-wheel drive vehicle has front and rear wheel driving power transmission systems for transmitting the output of a transmission. A forward overrunning clutch and a reverse overrunning clutch are provided in one of the power transmission systems. One of the overrunning clutches can be selected in accordance with the operation of a driver of the vehicle. The overrunning clutch operates to transmit the power to corresponding wheels and to allow the selected wheels to rotate faster than the other wheels. A locking device is provided for locking both overrunning clutches.

Abstract: A gear shifting apparatus of a transmission for a four-wheel drive vehicle comprises a final reduction device for transmitting the output of the transmission to rear wheels, and a clutch for additional transmitting the output of the transmission to front wheels. An extra low speed gear device having a reduction gear ratio higher than that of the first speed gear of the transmission is provided in the transmission. A shifter rod operated by a gearshift lever is provided for engaging the extra low speed gear device, and a shifter rail is provided for engaging the clutch for four-wheel driving. A lock device operatively connected to the shifter rod and to the shifter rail is provided for locking the shifter rod when the shifter rail is shifted to disengage the clutch for preventing the engagement of the extra low speed gear device by the operation of the shifter rod.

Abstract: A silicon wafer having a tungsten and/or molybdenum film formed on its surface is heat-treated in hydrogen containing water vapor. Thus, silicon can be selectively oxidized without substantially oxidizing tungsten and/or molybdenum.

Abstract: A control mechanism for a transmission apparatus for a four-wheel drive motor vehicle comprising an auxiliary change-speed transmission adapted to transmit power from the engine to a main transmission, a final reduction device for transmitting the output of the main transmission to the front axle and to the rear axle, a clutch connected to the final reduction device for transmitting the output of the main transmission for selectively connecting or disconnecting transmission of the output to one of the axles. An operation rod is longitudinally and slidably provided for swinging first and second guide plates. Each guide plate has a guide groove with which a part of a fork engages. By operating the operation rod, first and second guide plates are swung to cause the forks to shift with engagement with the guide grooves. The guide grooves are so arranged as to establish two-wheel high speed range driving, four-wheel high speed range driving and four-wheel low speed range driving.

Abstract: A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

Abstract: A semiconductor device has a conductive layer for wiring which is made of an Al alloy containing Mn in an amount greater than 1 percent by weight and below 6 percent by weight. The semiconductor device has excellent corrosion resistance, and has a high reliability.