Patents by Inventor Seiichi Kirii

Seiichi Kirii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Polycrystalline silicon reactor
    Patent number: 8540818
    Abstract: A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
    Type: Grant
    Filed: April 26, 2010
    Date of Patent: September 24, 2013
    Assignee: Mitsubishi Materials Corporation
    Inventors: Seiichi Kirii, Teruhisa Kitagawa
  • Polycrystalline silicon reactor
    Publication number: 20100269754
    Abstract: A polycrystalline silicon reactor in which the polycrystalline silicon is deposited by supplying raw-material gas to a heated silicon seed rod has; a bottom plate on which the silicon seed rod stands, having a dished upper surface; an opening of a path penetrating the bottom plate from the upper surface to a lower surface, being provided at a lowest part of the upper surface; and a plug which is detachably attached to the opening.
    Type: Application
    Filed: April 26, 2010
    Publication date: October 28, 2010
    Applicant: MITSUBISHI MATERIALS CORPORATION
    Inventors: Seiichi Kirii, Teruhisa Kitagawa
  • Process for producing hexachlorodisilane
    Patent number: 6846473
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: January 25, 2005
    Assignee: Mitsubishi Materials Polycrystalline Silicon Corporation
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue
  • Process for producing hexachlorodisilane
    Publication number: 20030147798
    Abstract: A process for producing hexachlorodisilane comprising, condensing an exhaust gas discharged from a reactor for producing polycrystalline silicon from a chlorosilane and hydrogen to separate the hydrogen, distilling the resultant condensate to separate the unreacted chlorosilane and by-product silicon tetrachloride, and then further distilling to recover hexachlorodisilane, wherein tetrachlorodisilane can be recovered together with the hexachlorodisilane, and the hexachlorodisilane and tetrachlorodisilane recovered have a far higher purity than the conventional ones produced from metallic silicon.
    Type: Application
    Filed: April 2, 2002
    Publication date: August 7, 2003
    Applicant: MITSUBISHI MATERIALS CORP.
    Inventors: Seiichi Kirii, Mitsutoshi Narukawa, Hisayuki Takesue