Abstract: A thin film EL device is disclosed which comprises (a) a substrate, (b) a transparent electrode layer formed on the substrate, (c) one or more insulating layers formed on the transparent electrode layer, with at least one of the insulating layers comprising a crystalline nitride, (d) an electroluminescent emitting layer comprising a luminescent host material consisting of an alkali earth calcogen compound formed on the insulating layers, and (e) a back electrode layer. In the above thin film EL device, it is preferable that the insulating layer in contact with the electroluminescent layer comprise a crystalline aluminum nitride or boron nitride, and that the transparent electrode layer comprise a host material consisting of a C-axis oriented zinc oxide.

Abstract: An electroluminescence device capable of emitting white light is disclosed which comprises a SrS layer with Ce added thereto as an activator and a ZnS layer with Mn added thereto as an activator.

Abstract: A thin film electroluminescent device is disclosed which includes an electroluminescent emitting layer comprising an alkaline-earth selenide, such as SrSe (strontium selenide) and calcium selenide (CaSe), or an alkaline-earth sulfide, such as CaS (calcium sulfide) and strontium sulfide (SrS), as the luminescent host material, and a lanthanoid rare-earth element as an activator, and a method of fabricating the same is also disclosed.

Abstract: A photosensitive material for use in electrophotography having a chargeability improved by incorporating 1 to 500 ppm As oxide in a Se-As (As: 20 to 40% by weight) system photosensitive layer.

Abstract: An electrophotographic reproduction process for forming an reproduced image of an original image with the use of a photosensitive member including a Se-As material as a photoconductive material. The process includes the steps of uniform charging, image exposure, developing, transferring, and discharging by irradiation of light. When the photosensitive member is subjected to repeated cycles of reproduction operation, the time period between the completion of discharging of the last preceding reproduction process and the initation of uniform charging of the next following reproduction process is set at a predetermined value which is 0.2 seconds or more in order to avoid the light fatigue effect of the photoconductive material.