Abstract: The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame material; a Pd plating or a Pd alloy plating, provided on the lead frame material; and a layer as an uppermost layer formed of a Pd oxide and gold or silver. A process for producing a lead frame for a semiconductor device comprises the steps of: plating a lead frame material with Pd or a Pd alloy; flasing the surface of the Pd or Pd alloy plating with gold (Au); and heat-treating the plated lead frame material in the air to provide a thin Pd oxide layer in only a Pd portion on the surface of a diffusion layer formed of Pd and Au.

Abstract: The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, for a semiconductor device, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame substrate; a first intermediate layer, of a Ni plating or a Ni alloy plating, provided on the lead frame substrate; a second intermediate layer, of a Ag plating or a Ag alloy plating, provided on the first intermediate layer; and an outermost layer, of a Pd plating or a Pd alloy plating, provided on the second intermediate layer, wherein the Ag alloy constituting the second intermediat layer is at least one alloy selected from Ag-Co, Ag-Fe, Ag-Pd, Ag-Au, and Ag-Pt.