Patents by Inventor Seiichi Tamura

Seiichi Tamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10700112
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: June 30, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 10448549
    Abstract: A component supply device of the disclosure includes: a loader being capable of accommodating a plurality of stick cases in a stacked state, each of the plurality of stick cases being capable of accommodating a plurality of electronic components, each of the plurality of stick cases having an opening in an end portion in a longitudinal direction; a component transporter moving one or more electronic components supplied from the plurality of stick cases to a predetermined component supply position; and a stick case detector detecting presence or absence of one or more stick cases in the loader.
    Type: Grant
    Filed: June 23, 2016
    Date of Patent: October 15, 2019
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Ryouji Eguchi, Shuuichi Kubota, Takashi Tamura, Seiichi Matsuo
  • Publication number: 20190035840
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Application
    Filed: October 2, 2018
    Publication date: January 31, 2019
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 10115755
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: October 30, 2018
    Assignee: Canon Kabushiki Kaisha
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 9608033
    Abstract: A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating film to cover the gates of the first and second MOSs, etching the first insulating film in the peripheral circuit area in a state that the pixel area is masked to form a side spacer on a side face of the gate of the second MOS, etching the first insulating film in the pixel area in a state that the peripheral circuit area is masked, and forming the second insulating film to cover the gates of the first and second MOSs and the side spacers.
    Type: Grant
    Filed: April 21, 2015
    Date of Patent: March 28, 2017
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Masatsugu Itahashi, Seiichi Tamura, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Yusuke Onuki
  • Patent number: 9570506
    Abstract: A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.
    Type: Grant
    Filed: April 30, 2015
    Date of Patent: February 14, 2017
    Assignee: Canon Kabushiki Kaisha
    Inventors: Nobuyuki Endo, Katsunori Hirota, Takumi Ogino, Masashi Kusukawa, Seiichi Tamura
  • Publication number: 20170005127
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Application
    Filed: September 13, 2016
    Publication date: January 5, 2017
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 9466627
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Grant
    Filed: December 2, 2015
    Date of Patent: October 11, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Publication number: 20160086992
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Application
    Filed: December 2, 2015
    Publication date: March 24, 2016
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Patent number: 9236410
    Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: January 12, 2016
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Aiko Kato, Kouhei Hashimoto, Seiichi Tamura
  • Publication number: 20150333098
    Abstract: A photoelectric conversion device includes a pixel circuit section including: a first semiconductor region containing a first conductivity type impurity; a second semiconductor region formed in the first semiconductor region by using the first conductivity type impurity; a third semiconductor region formed in the second semiconductor region by using a second conductivity type impurity; and a contact plug formed on the third semiconductor region. A net concentration of the first conductivity type impurity is higher in the second semiconductor region than in the first and third semiconductor regions. In the second and third semiconductor regions, a distance between the contact plug and a position where the concentration of the second conductivity type impurity is maximum is equal to or less than a distance between the contact plug and a position where the concentration of the first conductivity type impurity is maximum.
    Type: Application
    Filed: April 30, 2015
    Publication date: November 19, 2015
    Inventors: Nobuyuki Endo, Katsunori Hirota, Takumi Ogino, Masashi Kusukawa, Seiichi Tamura
  • Publication number: 20150325620
    Abstract: A solid-state image sensor includes a pixel area and a peripheral circuit area. The pixel area includes a first MOS, and the peripheral circuit area includes a second MOS. A method includes forming a gate of the first MOS and a gate of the second MOS, forming a first insulating film to cover the gates of the first and second MOSs, etching the first insulating film in the peripheral circuit area in a state that the pixel area is masked to form a side spacer on a side face of the gate of the second MOS, etching the first insulating film in the pixel area in a state that the peripheral circuit area is masked, and forming the second insulating film to cover the gates of the first and second MOSs and the side spacers.
    Type: Application
    Filed: April 21, 2015
    Publication date: November 12, 2015
    Inventors: Masatsugu Itahashi, Seiichi Tamura, Nobuaki Kakinuma, Mineo Shimotsusa, Masato Fujita, Yusuke Onuki
  • Patent number: 8754969
    Abstract: In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.
    Type: Grant
    Filed: May 16, 2012
    Date of Patent: June 17, 2014
    Assignee: Canon Kabushiki Kaisha
    Inventors: Seiichi Tamura, Mayu Ishikawa, Aiko Kato, Masatsuga Itahashi, Kouhei Hashimoto
  • Patent number: 8546902
    Abstract: The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
    Type: Grant
    Filed: May 13, 2010
    Date of Patent: October 1, 2013
    Assignee: Canon Kabushiki Kaisha
    Inventors: Seiichi Tamura, Hiroshi Yuzurihara, Takeshi Ichikawa, Ryuichi Mishima
  • Publication number: 20120300102
    Abstract: In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.
    Type: Application
    Filed: May 16, 2012
    Publication date: November 29, 2012
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Seiichi Tamura, Mayu Ishikawa, Aiko Kato, Masatsugu Itahashi, Kouhei Hashimoto
  • Patent number: D888773
    Type: Grant
    Filed: January 25, 2019
    Date of Patent: June 30, 2020
    Assignee: SMC CORPORATION
    Inventors: Soichi Sato, Ken Tamura, Tsukasa Odaka, Seiichi Nagura
  • Patent number: D888775
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: June 30, 2020
    Assignee: SMC CORPORATION
    Inventors: Soichi Sato, Ken Tamura, Makoto Yaegashi, Kazufumi Waki, Naoki Shinjo, Seiichi Nagura, Kenta Onuki
  • Patent number: D890213
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: July 14, 2020
    Assignee: SMC CORPORATION
    Inventors: Soichi Sato, Ken Tamura, Makoto Yaegashi, Kazufumi Waki, Naoki Shinjo, Seiichi Nagura, Kenta Onuki
  • Patent number: D890214
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: July 14, 2020
    Assignee: SMC CORPORATION
    Inventors: Soichi Sato, Ken Tamura, Makoto Yaegashi, Kazufumi Waki, Naoki Shinjo, Seiichi Nagura, Kenta Onuki
  • Patent number: D890215
    Type: Grant
    Filed: February 12, 2019
    Date of Patent: July 14, 2020
    Assignee: SMC CORPORATION
    Inventors: Soichi Sato, Ken Tamura, Makoto Yaegashi, Kazufumi Waki, Naoki Shinjo, Seiichi Nagura, Kenta Onuki