Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.

Abstract: A semiconductor device according to one embodiment of the present disclosure includes: a first semiconductor chip; a second semiconductor chip stacked on the first semiconductor chip via a spacer; a first terminal group provided around a stacked body in which the first semiconductor chip and the second semiconductor chip are stacked, and coupled to the first semiconductor chip; a second terminal group provided on an outer side of the first terminal group, and coupled to the second semiconductor chip; and a package member that seals the first semiconductor chip, the second semiconductor chip, the first terminal group, and the second terminal group, and in which at least the first terminal group and the second terminal group are exposed on a back face.

Abstract: A semiconductor device includes a plurality of semiconductor chips disposed in a vertical form through a spacer, in which a shield layer having a thickness such that an electromagnetic field radiation generated from a generation source of the semiconductor chip can sufficiently be absorbed is disposed between the semiconductor chips.