Patents by Inventor Seiichiro Murase

Seiichiro Murase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210057822
    Abstract: A wireless communication device includes: an antenna for transmitting and receiving a radio wave, a rectifying circuit that is connected to the antenna and rectifies the radio wave received by the antenna to generate voltage, an internal circuit that operates by the voltage generated by the rectifying circuit, and a switch circuit that is disposed contactlessly with respect to the antenna and operates on the basis of an output signal of the internal circuit, wherein the switch circuit includes a coupling wiring and a switch element, and the operation of the switch element varies the impedance of the antenna so that communication can be carried out.
    Type: Application
    Filed: March 4, 2019
    Publication date: February 25, 2021
    Applicant: Toray Industries, Inc.
    Inventors: Yoshihiro KARIYA, Kenta NOGUCHI, Hiroji SHIMIZU, Seiichiro MURASE, Hisashi NISHIKAWA
  • Publication number: 20200405546
    Abstract: The present invention provides a circuit including a plurality of component parts formed on a substrate and having common functions, wherein the plurality of component parts each includes a detection part which shows responsiveness to moisture; wherein the responsiveness to moisture varies between the plurality of component parts; and wherein the presence or absence of a response to moisture detected by each detection part corresponds to a binary digital signal, and whereby the circuit outputs a sequence of binary digital signals.
    Type: Application
    Filed: November 15, 2018
    Publication date: December 31, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Kojiro NAITO, Shota KAWAI, Junji WAKITA, Kenta NOGUCHI, Seiichiro MURASE
  • Publication number: 20200321399
    Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.
    Type: Application
    Filed: May 29, 2017
    Publication date: October 8, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Shota KAWAI, Seiichiro MURASE, Hiroji SHIMIZU
  • Patent number: 10790461
    Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: September 29, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Daisuke Sakii, Seiichiro Murase, Junji Wakita
  • Publication number: 20200293849
    Abstract: A package in an aspect of the present invention includes: a package body having a receiving cavity for receiving a cavity item; a sheet for sealing the receiving cavity; a conducting wire formed on the sheet so as to pass above the sealed opening portion of the receiving cavity; and a wireless communication device formed on the sheet so as to be connected to the conducting wire. The wireless communication device transmits a signal including information which differs between before and after the conducting wire together with the sheet is cut as a result of opening the receiving cavity. The information transmitted from the wireless communication device is read by a reader. The package and the reader are used for a cavity item management system.
    Type: Application
    Filed: September 27, 2018
    Publication date: September 17, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Junji WAKITA, Seiichiro MURASE
  • Publication number: 20200261278
    Abstract: The present invention provides a wireless communication device including: a circuit unit; and an antenna which is connected to the circuit unit and which transmits and receives signals to and from a transceiver in a non-contact manner. The wireless communication device transmits different signals to the transceiver, depending on the presence or absence of contact between at least a part of the circuit unit and moisture.
    Type: Application
    Filed: August 29, 2018
    Publication date: August 20, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Shota KAWAI, Yoshihiro KARIYA, Junji WAKITA, Seiichiro MURASE
  • Publication number: 20200244182
    Abstract: An object of the present invention is to provide an excellent integrated circuit by a simple process.
    Type: Application
    Filed: October 25, 2018
    Publication date: July 30, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Hiroji SHIMIZU, Seiichiro MURASE
  • Publication number: 20200203292
    Abstract: The purpose of the present invention is to provide: a conductive film; a method for producing a conductive film, which enables the achievement of a conductive film or conductive pattern having good electrical conductivity by means of light irradiation of a short period of time without being accompanied by a long-time heat treatment at high temperatures; a method for producing a field effect transistor, which uses this method for producing a conductive film; and a method for producing a wireless communication device. A method for producing a conductive film according to the present invention for the achievement of the above-described purpose comprises: a step for forming a coating film by applying a conductive paste, which contains conductive particles that have surfaces covered by elemental carbon, onto a substrate; and a step for irradiating the coating film with flashing light.
    Type: Application
    Filed: June 22, 2018
    Publication date: June 25, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Shota KAWAI, Junji WAKITA, Seiichiro MURASE
  • Patent number: 10636866
    Abstract: Provided is a capacitor that has good bonding between the dielectric layer and the conductive layer, has a characteristic of low ESR, and keeps leak current suppressed. The capacitor contains a dielectric layer and a conductive film and is characterized in that the dielectric layer contains an organic compound and a metal compound and that the conductive film contains a conductive material and an organic compound.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: April 28, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Hiroji Shimizu, Junji Wakita, Seiichiro Murase
  • Patent number: 10611868
    Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: April 7, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Junji Wakita, Hiroji Shimizu, Shota Kawai, Seiichiro Murase
  • Patent number: 10615352
    Abstract: An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: April 7, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Hiroji Shimizu, Seiichiro Murase, Daisuke Sakaii
  • Publication number: 20200035925
    Abstract: A problem addressed by the present invention is to provide a semiconductor device that is free from deterioration over time, is stable, and has n-type semiconductor characteristics. A main object of the present invention is to provide a semiconductor device that is characterized by including: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer insulating the semiconductor layer from the gate electrode; and a second insulating layer in contact with the semiconductor layer on the opposite side of the semiconductor layer from the gate insulating layer; wherein the semiconductor layer contains a carbon nanotube; wherein the second insulating layer contains an electron-donating material having one or more selected from a nitrogen atom and a phosphorus atom; and wherein the second insulating layer has an oxygen permeability of 4.0 cc/(m2·24 h·atm) or less.
    Type: Application
    Filed: February 28, 2018
    Publication date: January 30, 2020
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Kazuki ISOGAI, Seiichiro MURASE, Daisuke SAKII
  • Patent number: 10538075
    Abstract: The present invention provides a silicone composition for use in a printing plate, the composition including at least: a SiH group-containing compound; a compound represented by the following general formula (I); a compound represented by the following general formula (II); and/or a compound represented by the following general formula (III); wherein Ds in the compound represented by the general formula (I), Gs in the compound represented by the general formula (II) and Js in the compound represented by the general formula (III) each represents an acetoxy group or a dialkyloximino group: A-Si-(D)3 (I) (wherein in the general formula (I), A represents a non-hydrolyzable functional group capable of undergoing a hydrosilylation reaction with a SiH group); E-Si-(G)3 (II) (wherein in the general formula (II), E represents a non-hydrolyzable functional group incapable of undergoing a hydrosilylation reaction with a SiH group); and Si-(J)4 (III).
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: January 21, 2020
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Akihiro Iihara, Yasunori Kuse, Seiichiro Murase
  • Publication number: 20190378998
    Abstract: A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): in the general formula (1), R1 represents a hydrogen atom, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group, or an alkenyl group; R2 represents a hydrogen atom, an alkyl group, a cycloalkyl group, or a silyl group; m represents 0 or 1; A1 represents an organic group including at least two groups selected from a carboxy group, a sulfo group, a thiol group, a phenolic hydroxy group, or a derivative of these groups.
    Type: Application
    Filed: November 16, 2017
    Publication date: December 12, 2019
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Daisuke SAKII, Seiichiro MURASE, Junji WAKITA
  • Patent number: 10490748
    Abstract: There is provided a rectifying element which is provided with an insulating base, (a) a pair of electrodes composed of a first electrode and a second electrode and (b) a semiconductor layer arranged between the pair of electrodes, wherein the components (a) and (b) are provided on a first surface of the insulating base. The rectifying element is configured such that the semiconductor layer (b) contains carbon nanotube composites each of which comprises a carbon nanotube and a conjugated polymer adhered onto at least a part of the surface of the carbon nanotube. The present invention provides a rectifying element having excellent rectifying properties by a simple process.
    Type: Grant
    Filed: September 21, 2017
    Date of Patent: November 26, 2019
    Assignee: TORAY INDUSTRIES, INC.
    Inventors: Hiroji Shimizu, Seiichiro Murase
  • Publication number: 20190285576
    Abstract: A semiconductor sensor includes: a substrate; a first electrode; a second electrode; and a semiconductor layer located between the first electrode and the second electrode. The semiconductor layer includes a semiconducting component to which target recognition molecules are bonded or attached, the target recognition molecule includes at least a target capture body X and a linking group L2, the target capture body X is a protein or nucleic acid having a molecular weight of 20,000 or higher and 200,000 or lower, and number of atom(s) N from the atom bonded to the semiconducting component or from the atom bonded to the group attached to the semiconducting component to the atom bonded to the atom originated from the target capture body X in the linking group L2 is 5 or more and 30 or less.
    Type: Application
    Filed: October 13, 2017
    Publication date: September 19, 2019
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Kojiro NAITO, Kazumasa NAGAO, Seiichiro MURASE
  • Publication number: 20190198786
    Abstract: Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.
    Type: Application
    Filed: September 6, 2017
    Publication date: June 27, 2019
    Applicant: Toray Industries, Inc.
    Inventors: Hiroji Shimizu, Seiichiro Murase, Shota Kawai
  • Patent number: 10293604
    Abstract: In order to keep possible local temperature differences in a liquid ejection head small to allow stable liquid ejection performance to be achieved, temperatures in a plurality of heating areas in a liquid ejection head are discretely controlled using heating elements and temperature detection elements.
    Type: Grant
    Filed: March 15, 2017
    Date of Patent: May 21, 2019
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takatsuna Aoki, Shuzo Iwanaga, Seiichiro Karita, Kazuhiro Yamada, Shingo Okushima, Zentaro Tamenaga, Akira Yamamoto, Tatsurou Mori, Noriyasu Nagai, Akio Saito, Masashi Hayashi, Takeshi Murase, Yuki Sawai
  • Publication number: 20190101507
    Abstract: A semiconductor element including a substrate, a first electrode, a second electrode, and a semiconductor layer disposed between the first electrode and the second electrode, wherein the semiconductor layer contains at least one selected from carbon nanotubes and graphene, and a relationship between a channel length LC and a channel width WC of the semiconductor element is 0.01?WC/LC?0.8. A semiconductor element having excellent switching characteristics and high detection sensitivity when used as a sensor is provided.
    Type: Application
    Filed: April 12, 2017
    Publication date: April 4, 2019
    Applicant: TORAY Industries, Inc.
    Inventors: Kazuki ISOGAI, Seiichiro MURASE, Kazumasa NAGAO
  • Publication number: 20190099995
    Abstract: The present invention provides a silicone composition for use in a printing plate, the composition including at least: a SiH group-containing compound; a compound represented by the following general formula (I); a compound represented by the following general formula (II); and/or a compound represented by the following general formula (III); wherein Ds in the compound represented by the general formula (I), Gs in the compound represented by the general formula (II) and Js in the compound represented by the general formula (III) each represents an acetoxy group or a dialkyloximino group: A-Si-(D)3 (I) (wherein in the general formula (I), A represents a non-hydrolyzable functional group capable of undergoing a hydrosilylation reaction with a SiH group); E-Si-(G)3 (II) (wherein in the general formula (II), E represents a non-hydrolyzable functional group incapable of undergoing a hydrosilylation reaction with a SiH group); and Si-(J)4 (III).
    Type: Application
    Filed: March 15, 2016
    Publication date: April 4, 2019
    Applicant: TORAY INDUSTRIES, INC.
    Inventors: Akihiro IIHARA, Yasunori KUSE, Seiichiro MURASE