Abstract: A hard film formed of a material containing a (M1?xSix)(C1?dNd) compound, wherein M is at least one of A1 and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, wherein x, 1?x, d and 1?d are atomic ratios of Si, M, N and C, respectively.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, wherein x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45?x?0.98 and 0?d?1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.

Abstract: A hard film formed of a material containing a (M1-xSix)(C1-dNd) compound, wherein M is at least one of Al and the elements in groups 3A, 4A, 5A and 6A, 0.45≦x≦0.98 and 0≦d≦1, where x, 1-x, d and 1-d are atomic ratios of Si, M, N and C, respectively.

Abstract: A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material.

Abstract: Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts.