Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.

Abstract: A substrate processing apparatus of the invention includes: a substrate holding unit that holds a substrate almost in a horizontal posture; a rotating unit that rotates the substrate held by the substrate holding unit about a vertical shaft line; and an etching liquid nozzle disposed oppositely to a bottom surface of the substrate held by the substrate holding unit and having plural discharge ports each having a different distance from a rotation center of the substrate rotated by the rotating unit so as to discharge an etching liquid toward the bottom surface of the substrate rotated by the rotating unit from the plural discharge ports.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A substrate processing apparatus flows a propagation liquid for propagating ultrasonic vibrations, and controls the flow rate thereof. The ultrasonic vibrations are scattered by the flow of the propagation liquid, so that a concentrated impact of the ultrasonic vibrations given on a substrate is relieved. The substrate processing apparatus can increase the output power of ultrasonic vibrations by controlling the flow rate of the propagation liquid while preventing a fine pattern formed on the substrate from stripping or falling down.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A substrate treating apparatus includes a cleaning medium feed mechanism having a discharge nozzle for discharging warm water as a cleaning medium toward a substrate. The discharge nozzle is reciprocable between a position opposed to the center of rotation of the substrate held and rotated by a spin chuck and a position opposed to the edge of the substrate. The discharge nozzle is connected to a deionized water source through a solenoid valve and a heater. Deionized water fed from the deionized water source is heated warm and supplied to the substrate through the discharge nozzle.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: Reaction products produced under dry etching attach to a substrate undergoing dry etching. It is necessary to remove the reaction products for the next step. Therefore, in the case of the background art, the processing of supplying a remover for reaction products, an intermediate rinse for washing away the remover, and deionized water to a substrate in order is performed. The above processing is conventionally performed under an atmospheric atmosphere. Therefore, a thin film may be changed in quality due to atmospheric components. Therefore, a substrate processing apparatus of the present invention uses means for blowing nitrogen gas on a substrate and supplies a remover to the substrate while blowing nitrogen. Thereby, it is possible to prevent a thin film from being changed in quality due to atmospheric components.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A substrate processing apparatus includes a container in which a heating plate, a discharge nozzle for discharging a vapor of organic solvent, and a discharge nozzle for supplying a process gas and a cooling gas are provided. A pump in communication with an exhaust outlet of the container exhausts an atmosphere from the container to reduce pressure in the container. Therefore, the substrate processing apparatus is capable of performing (1) the process of drying a substrate in a reduced-pressure atmosphere by the use of the vapor of organic solvent, and (2) the process of drying the substrate in the reduced-pressure atmosphere by heating, to thereby efficiently dry the substrate.

Abstract: A substrate treating apparatus includes a cleaning medium feed mechanism having a discharge nozzle for discharging warm water as a cleaning medium toward a substrate. The discharge nozzle is reciprocable between a position opposed to the center of rotation of the substrate held and rotated by a spin chuck and a position opposed to the edge of the substrate. The discharge nozzle is connected to a deionized water source through a solenoid valve and a heater. Deionized water fed from the deionized water source is heated warm and supplied to the substrate through the discharge nozzle.

Abstract: A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.

Abstract: A removal liquid is supplied to a substrate on which a thin film formed is patterned by dry etching using a resist film as a mask, and cleaning is made with de-ionized water, thereby removing a reaction product generated on the surface of the substrate. After that, the processed substrate is heated, thereby completely drying the substrate from which the reaction product has been eliminated.

Abstract: Reaction products produced under dry etching attach to a substrate undergoing dry etching. It is necessary to remove the reaction products for the next step. Therefore, in the case of the background art, the processing of supplying a remover for reaction products, an intermediate rinse for washing away the remover, and deionized water to a substrate in order is performed.

Abstract: The substrate processing apparatus is provided with a gas-liquid mixing nozzle for generating a process liquid mist by mixing a liquid and a pressurized gas, to discharge the process liquid mist to a substrate at high speeds. The liquid may be remover liquid, intermediate rinse liquid or deionized water. The reaction products which having been generated on the substrate in etching process is removed at high speeds with the flow of the mist, whereby the quality of the process is improved.

Abstract: A substrate developing method and apparatus for improving uniformity of a developing process by adjusting a temperature gradient of a developer spread over the surface of a substrate. The developer is delivered to a central region of the substrate surface and spread over the surface. The developer in this state has activity diminishing, and thereby lowering the developing rate, gradually from center to edge of the substrate. With a gas flowing down around the edge of the substrate during the developing process, the developer vaporizes from peripheral regions of the substrate at an increased rate, thereby lowering the developer temperature in the peripheral regions. This increases the developing rate gradually from edge to center of the substrate. The uniformity of the developing process is improved by balancing the gradient of developing rate due to the temperature variation of the developer against the gradient of developing rate due to the lowering of developer activity.